SE1450 HONEYWELL | Alldatasheet
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Technical content
GaAs Infrared Emitting Diode SE1450
DESCRIPTION
FEATURES
Compact, metal can coaxial package• 24¡ (nominal) beam angle• 935 nm wavelength• Wide operating temperature range (55¡C to +125¡C) Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1450XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations. INFRA-63.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.005(0.12)Tolerance 2 plc decimals ±0.020(0.51) .106(2.69) DIA.076(1.93) ANODE MIN .095(2.41)DIA .020(0.51) DIA .091(2.26) .079(2.01) .062(1.57)DIA 1.000(25.40) .122(3.10) .010(0.25) CATHODE (CASE) DIM_001a.ds4 SE1450-XXX .106(2.69) DIA.076(1.93) ANODE CATHODE TYPICAL MIN .095(2.41)DIA .020 (0.51)DIA .091(2.26) .079(2.01) .062(1.57)DIA 1.000(25.40) .122(3.10) .010(0.25) .020 (0.51)DIA ~~~~ DIM_001b.ds4 SE1450-XXXL Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h8
GaAs Infrared Emitting Diode SE1450
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 75 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 9
GaAs Infrared Emitting Diode SE1450 Radiant Intensity vs Angular Displacement gra_001.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Fig. 1 Radiant Intensity vs Forward Current gra_002.ds4 Forward current - mA Norm alized radiant intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 2 Forward Voltage vs Forward Current gra_003.ds4 Forward current - mA Forward voltage - V 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 0 20 40 60 Fig. 3 Forward Voltage vs Temperature gra_200.ds4 Temperature - °C Forward voltage - V 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 -50 -25 0 25 50 75 100 125 IF = 20 mA Fig. 4 Spectral Bandwidth gra_005.ds4 Wavelength - nm Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 870 890 910 930 950 970 990 1010 Fig. 5 Coupling Characteristics with SD1440 gra_006.ds4 Lens-to-lens separation - inches Norm alized light current 0.0 0.2 0.4 0.6 0.8 1.0 Fig. 6 Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h10
GaAs Infrared Emitting Diode SE1450 Relative Power Output vs Free Air Temperature gra_130.ds4 TA - Free-air temperature - (°C) Relative power output 0.1 1.0 -50 -25 0 +25 +50 +75 +100 0.2 0.5 2.0 5.0 IF = 30 mA IF = 20 mA IF = 10 mA IF = 40 mA Fig. 7 All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 11