SE1050W

SE1050W SIGE | Alldatasheet

Document overview

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Technical content

Features

§ Single +5 V power supply § Power dissipation = 430 mW (typ) § Input noise current = 1.4 µA rms when used with a 0.2 pF detector § Transimpedance gain = 1.2 kΩ into a 50 Ω load (differential) § Input current overload = 2.3 mA pk (+1.1 dBm for

0.9 A/W responsivity - meets 10 Gigabit Ethernet

specification) § Wide linear dynamic range of 17 dB (typ) § 50 Ω single-ended or 100 Ω differential wire bond selectable outputs § Bandwidth (-3 dB) = 9.8 GHz § Operates at OC-192 / STM-64 up to 10.7 Gb/s NRZ rates § Power supply rejection for both single ended and differential modes of operation § Optimized for PIN photodetectors § Minimal external components, supply decoupling only § Operating junction temperature range = -40°C to +100°C § Equivalent to Nortel Networks AE99

Ordering Information

SE1050W Bare Die Shipped in Waffle Pack Product Description SiGe Semiconductor offers a portfolio of optical networking ICs for use in high -performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s. SiGe Semiconductor’s SE1050W is a fully integrated silicon bipolar transimpedance amplifier, providing wideband, low noise preamplication of signal current from a PIN photodetector. It features differential outputs. A decoupling capacitor on the supply is the only external component required. A system bloc k diagram is shown after the functional description, on page 3. Noise performance is optimized for 10 Gb/s operation, with a calculated rms noise based sensitivity of – 20 dBm for 10-10 bit error rate, using a detector with 0.20 pF capacitance and a respo nsivity of 0.9 A/W, with an infinite extinction ratio source. Functional Block Diagram VCC or +ve supply SE1050 TzAmp

10 Gb/s

Driver TZ_IN Input Current OUTP OUTN 50 Ω 50 Ω R f 1.29 V ACGND Bandgap Reference Power Supply Rejection Wire bond option for single-ended operation 50 Ω

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 2 of 11 Bondpad Diagram Top View VCC2 VCC2 GND VCC1 VCC1 GND TZ_IN OUTN OUTP 1 2 10 9 8 6 5 4 GND GND ACGND GND Bondpad Description Pad No. Name Description 1 GND Negative supply (0V). 2 GND Negative supply (0V). 3 TZ_IN Input pad (connect to photodetector anode). 4 GND Negative supply (0V). 5 GND Negative supply (0V). 6 GND Negative supply (0V). 7 VCC1 Positive supply (+5 V). 8 VCC1 Positive supply (+5 V).

9 VCC2 Positive supply (+5 V) – Note: This is a separate supply for the output driver stage

only.

10 VCC2 Positive supply (+5 V) – Note: This is a separate supply for the output driver stage

only. 11 OUTN Negative differential voltage output; leave unconnected for single-ended operation. 12 OUTP Positive differential or single-ended voltage output.

13 ACGND Bond option: Connected to external capacitor to ground for single-ended operation

(recommended 1 nF); unconnected for differential operation.

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 3 of 11 Functional Description Amplifier Front-End The transimpedance front -end amplifies the current from a PIN photodetector, anode connected to pad TZ_IN, to produce a differential output voltage with the feedback resistor Rf determining the level of amplification (see the functional block diagr am on page 1). The input pad TZ_IN is biased at nominally 1.29 V above ground, allowing the photodetector to have a wide reverse -bias by connecting the cathode to VCC. This enables single rail operation and normally ensures that the PIN operates in its c onstant, low - capacitance region. The output stage has its own supply connection VCC2 (+5 V) to maintain integrity of the high -speed signal path. The output stage shares the GND (0 V) connection with the remainder of the circuitry, which has a separate supply connection VCC1 (+5 V). Output Driver Stage The output driver acts as a buffer stage, capable of swinging up to 1.1 V pk -pk differential into a 100 Ω load. The output can be configured in a differential or single-ended mode. For differential opera tion, the pad ACGND is not wire bonded and the circuit provides a fully balanced 100 Ω output, on the pins OUTP and OUTN. For single -ended operation, the ACGND pad is required to be wire bonded to an external capacitor to ground (recommend 1 nF). Under these circumstances, OUTP operates as a single -ended 50 Ω output. In both cases, increasing optical input level gives a positive -going output signal on the OUTP pin. Power Supply Rejection An on -chip power supply rejection circuit is used to achieve bot h single -ended and differential rejection from the +5 V VCC rail. This rejection ensures that performance is not degraded by noise on the power supply. The circuit achieves a power supply rejection on the outputs of 38 dB for single -ended and 24 dB for d ifferential operation, up to 100 kHz. The use of external decoupling will help to remove any unwanted signals at higher frequencies. System Block Diagram Receiver Module Data Post Amplifier 2 PIN SE1050W 2 SE1250 TZ Amplifier Clock CDR & Demux Data Mux Ck In LOS Laser Driver SE1150/51/52

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 4 of 11 Absolute Maximum Ratings These are stress ratings only. Exposur e to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. Symbol Parameter Min Max Unit VCC Supply Voltage – 0.7 6.0 V VIO Voltage at any input or output – 0.5 VCC+0.5 V IIO Current sourced into any input or output except TZ_IN – 20 20 mA IIO Current sourced into pin TZ_IN – 5 5 mA VESD Electrostatic Discharge (100 pF, 1.5 kΩ ) except TZ_IN and ACGND – 2 2 kV VESD Electrostatic Discharge (100 pF, 1.5 kΩ ) pins TZ_IN and ACGND – 0.25 0.25 kV Tstg Storage Temperature – 65 150 °C Recommended Operating Conditions Symbol Parameter Min Typ Max Unit VCC Supply Voltage 4.7 5.0 5.3 V Tj Operating Junction Temperature – 40 100 °C Symbol Parameter Min Typ Max Unit ICC Supply Current 86 130 mA Vin Input Bias Voltage 1.28 1.29 1.34 V Vout Output Bias Voltage 3.0 V Rout Output Resistance 38 50 62 Ω

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 5 of 11 Symbol Parameter Min Typ Max Unit BW (3dB) Small Signal Bandwidth at – 3dB point 8 9.8 13 GHz Tz Differential Transimpedance (50 Ω on each output, f = 100 MHz) 0.75 1.2 1.8 kΩ Dri Input Data Rate 10.7 Gb/s Voutmax Maximum Differential Output Voltage 1.1 V pk-pk Flf Low Frequency Cut-off 37 47 kHz PSRR Power Supply Rejection Ratio (differential) up to 100 kHz 16 24 dB PSRR Power Supply Rejection Ratio (single-ended) up to 100 kHz 30 38 dB Olim Onset of Limiting (mean input current from photodetector) 290 460 µA mean DR Linear Dynamic Range (sensitivity to onset of limiting) 17 dB lOL Input Current before overload (10 Gb/s NRZ data) 2300 µA pk-pk Pol Optical Overload +1.1 dBm Nrms Input Noise Current (in 10 GHz) 1.4 2.0 µA rms DC and AC electrical characteristics are specified under the following conditions: (Must comply with recommended bonding arrangement that will be provided as an application note) Transimpedance (Tz) measured with 0 > lin < 580 µA pk-pk, at 100 MHz

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 6 of 11 Bondpad Configuration The bondpad center coordinates are referenced to the center of the lower left pad (pad 4). All dimensions are in microns (µm). Pad No. Name X Coordinate (µm) Y Coordinate (µm) 1 GND 234.9 658.0 2 GND 121.7 658.0 3 TZ_IN 0 510.3

4 GND 0 0

5 GND 116.5 0 6 GND 233.5 0 7 VCC1 365.2 0 8 VCC1 480.2 0 9 VCC2 693.0 0 10 VCC2 808.0 0 11 OUTN 808.0 418.9 12 OUTP 808.0 537.3 13 ACGND 619.9 658.0

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 7 of 11 The diagram below shows the bondpad configuration of the SE1050W Transimpedance Amplifier. Note that the diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. All VCC and GND pads must be bonded to minimize inductive effects. Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B. Top View 510.3 418.9 118.4 120.7 121.7 113.2 385.0 188.1 1053.0 904.0 250.0Side View 147.7 All Dimensions in Microns (µm) Top View 510.3 418.9 118.4 120.7 121.7 113.2 385.0 188.1 1053.0 904.0 250.0Side View 147.7 All Dimensions in Microns (µm)

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 8 of 11 Applications Information For optimum performance it is recommended that the device be used in differential mode with the circuit shown in the first diagram below. All VCC and GND pads must be wire bonded to ensure correct high frequency performance. Connections for differential operation: TZ Amplifier SE1050W TZ_IN VCC1 OUTP OUTN GND 7 8 1 4 5 6 0 V +5 V PIN Bias PIN 1 nF min 1 nF min To 50 O loads, AC coupled ACGND 9 10 VCC2 NC Connections for single ended operation: TZ Amplifier SE1050W TZ_IN VCC1 OUTP OUTN GND 7 8 1 4 5 6 0 V +5 V PIN Bias PIN 1 nF min 1 nF min To 50 O load, AC coupled ACGND 9 10 VCC2 NC 1 nF min

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 9 of 11 As a guide to the effect of bondwire length on inductance, the table below gives some examples of observed inductance per millimeter for popular gold bondwire diameters. The effect of input bondwire inductance on Bandwidth, Input Referred Noise and Gain Peak, is shown in the graphs below. Bondwire diameter (mm) Inductance per mm (nH) 25 0.81 30 0.77 32 0.76 Bandwidth vs Input Bondwire Inductance Differential Mode of Operation Bandwidth (GHz) Input Inductance (nH) Cpin = 0.2 pF Cpin = 0.25 pF

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 10 of 11 Input Referred Noise vs Input Bondwire Inductance Differential Mode of Operation Input Referred Noise (uA) 1.2 1.6 1.5 1.4 1.3 Input Inductance (nH) Cpin = 0.2 pF Cpin = 0.25 pF 1.7 Gain Peak vs Input Bondwire Inductance Differential Mode of Operation Gain Peak (dB) 0.0 4.0 3.0 2.0 1.0 Input Inductance (nH) Cpin = 0.2 pF Cpin = 0.25 pF

LightCharger™ 10 Gb/s Transimpedance Amplifier Final 45-DST-01 § Rev 1.5 § May 24/02 11 of 11 http://www.sige.com Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933

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San Jose, CA Cambourne USA 95112 Cambridge CB3 6DP Phone: +1 408 998 5060 Phone: +44 1223 598 444 Fax: +1 408 998 5062 Fax: +44 1223 598 035 Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor reserves the right to change information at any time without notification. Preliminary The datasheet contains information from the design target specification. SiGe Semiconductor reserves the right to change information at any time without notification. Final The datasheet contains information from the final product specification. SiGe Semiconductor reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. LightCharger™ trademark is o wned by SiGe Semiconductor. Copyright 2002 SiGe Semiconductor All Rights Reserved