SE1030W

SE1030W SIGE | Alldatasheet

Document overview

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Technical content

Features

§ Single +3.3 V power supply § Input noise current = 360 nA rms when used with a 0.5 pF detector § Transimpedance gain = 2.3 kΩ into a 50 Ω load (differential) § On-chip automatic gain control gives input current overload of 2.6 mA pk and max output voltage swing of 300 mV pk-pk § Differential 50 Ω outputs § Bandwidth (-3 dB) = 2.4 GHz § Wide data rate range = 50 Mb/s to 2.5 Gb/s § Constant photodiode reverse bias voltage = 1.5 V (anode to input, cathode to VCC) § Minimal external components, supply decoupling only § Operating junction temperature range = -40°C to +125°C § Equivalent to Nortel Networks AB89-A2A

Ordering Information

SE1030W Bare Die Shipped in Waffle Pack Product Description SiGe Semiconductor offers a portfolio of optical networking ICs for use in high -performance optical transmitter and receiver function s, from 155 Mb/s up to 12.5 Gb/s. SiGe Semiconductor’s SE1030W is a fully integrated, silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It features differential outputs, and i ncorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 mA peak. A decoupling capacitor on the supply is the only external circuitry required. A system block diagram is shown after the functional description, on page 3. Noise performance is optimized for 2.5 Gb/s operation, with a calculated rms noise based sensitivity of – 26 dBm for 10-10 bit error rate, achieved using a detector with 0.5 pF capacitance and a responsivity of 0.9 A/W, with an infinite extinction ratio source. Functional Block Diagram VCC or +ve supply SE1030 TzAmp

2.5 Gb/s

TZ_IN Input Current OUTP OUTN 50 Ω 50 Ω R f

LightCharger™ 2.5 Gb/s Transimpedance Amplifier Final 43-DST-01 § Rev 1.5 § May 24/02 2 of 9 Bondpad Diagram Top View VCC VCC VEE2 VEE1 VEE1 VEE1 TZ_IN OUTN OUTP VCC 11 7 6 5 4

2 DNC

Pad No. Name Description 1 VCC Positive supply (+3.3 V), pads 1, 8 & 11 are connected on chip. Only one pad needs to be bonded. 2 DNC Do not connect. 3 TZ_IN Input pad (connect to photodetector anode).

4 VEE2 Negative supply (0V) – Note this is separate ground for the input stage, which is AC

coupled on chip. There is no DC current through this pad. 5 VEE1 Negative supply (0V), pads 5, 6 & 7 are connected on chip. Only one pad needs to be bonded. 6 VEE1 Negative supply (0V), pads 5, 6 & 7 are connected on chip. Only one pad needs to be bonded. 7 VEE1 Negative supply (0V), pads 5, 6 & 7 are connected on chip. Only one pad needs to be bonded. 8 VCC Positive supply (+3.3 V), pads 1, 8 & 11 are connected on chip. Only one pad needs to be bonded. 9 OUTN Negative differential voltage output. 10 OUTP Positive differential voltage output. 11 VCC Positive supply (+3.3 V), pads 1, 8 & 11 are connected on chip. Only one pad needs to be bonded.

LightCharger™ 2.5 Gb/s Transimpedance Amplifier Final 43-DST-01 § Rev 1.5 § May 24/02 3 of 9 Functional Description Amplifier Front-End The transimpedance front -end amplifies an input current from a photodetector, at pin TZ_IN, to produce a differential output voltage with the feedback resistor Rf determining the level of amplification (see the functional block diagram on page 1). An automatic gain control loop varies this resistor, to ensure that the output from the front -end does not saturate the output driver stage that follows. This gain control allows input signals of up to 2.6 mA peak. The input pin TZ_IN is biased at 1.5 V below the supply voltage VCC, allowing a photodetector to have a constant reverse bias by connecting the cathode to 3.3 V. This enables full single rail operation. The front -end stage has its own supply ground connection (VEE2) to achieve optimum noise performance and maintain integrity of the high -speed signal path. The front -end shares the VCC (+3.3 V) connection with the remainder of the circuitry, which has a separate ground (VEE1). Output driver stage The output driver acts as a buffer stage, capable of swinging up to 300 mVpk-pk differential into a 100 Ω load. The small output swings allow ease of use with low voltage post amplifiers (e.g. 3.3 V parts). Increasing optical input level gives a positive -going output signal on the OUTP pin. Automatic Gain Control (AGC) The AGC circuit monitors the voltages from the output driver and compares them to an internal referenc e level produced via the on -chip bandgap reference circuit. When this level is exceeded, the gain of the front-end is reduced by controlling the feedback resistor Rf. A long time -constant integrator is used within the control loop of the AGC with a typica l low frequency cut-off of 5 kHz. System Block Diagram Receiver Module Clock & Data Recovery Clock Data 2

2.5 GHz

LightCharger™ 2.5 Gb/s Transimpedance Amplifier Final 43-DST-01 § Rev 1.5 § May 24/02 4 of 9 Absolute Maximum Ratings These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliabilit y of the device. Avoid operating the device outside the recommended operating conditions defined below. Symbol Parameter Min Max Unit VCC Supply Voltage – 0.7 6.0 V VIO Voltage at any input or output – 0.5 VCC+0.5 V IIO Current sourced into any input or output except TZ_IN – 20 20 mA IIO Current sourced into pin TZ_IN – 5 5 mA VESD Electrostatic Discharge (100 pF, 1.5 kΩ ) except TZ_IN – 2 2 kV VESD Electrostatic Discharge (100 pF, 1.5 kΩ ) pin TZ_IN – 0.25 0.25 kV Tstg Storage Temperature – 65 150 °C Recommended Operating Conditions Symbol Parameter Min Typ Max Unit VCC Supply Voltage 3.1 3.3 3.5 V Tj Operating Junction Temperature – 40 125 °C Symbol Parameter Min Typ Max Unit ICC max Supply Current (max input current) 66 101 mA ICC zero Supply Current (zero input current) 52 85 mA lagc AGC Threshold 42 µA pk-pk Vin Input Bias Voltage VCC– 1.57 VCC– 1.52 VCC– 1.47 V Vout Output Bias Voltage VCC– 0.30 V Rout Output Resistance 35 50 65 Ω

LightCharger™ 2.5 Gb/s Transimpedance Amplifier Final 43-DST-01 § Rev 1.5 § May 24/02 5 of 9 Symbol Parameter Min Typ Max Unit BW (3dB) Small Signal Bandwidth at – 3dB point 1.8 2.4 GHz Tz Differential Transimpedance (50 Ω on each output, f = 100 MHz) 1.6 2.3 3.1 kΩ Dri Input Data Rate 50 2500 Mb/s Voutmax Maximum Differential Output Voltage 300 mV pk-pk Flf Low Frequency Cut-off 5 kHz lOL Input Current before overload (2.5 Gb/s NRZ data) 2600 µA pk-pk Pol Optical Overload +1.6 dBm Nrms Input Noise Current (in 2 GHz) 360 500 nA rms DC and AC electrical characteristics are specified under the following conditions: Transimpedance (Tz) measured with 4 µA mean photocurrent

LightCharger™ 2.5 Gb/s Transimpedance Amplifier Final 43-DST-01 § Rev 1.5 § May 24/02 6 of 9 Bondpad Configuration The bondpad center coordinates are referenced to the center of the lower left pad (pad 4). All dimensions are in microns (µm). Pad No. Name X Coordinate (µm) Y Coordinate (µm) 1 VCC -307.0 698.0 2 DNC -307.0 583.0 3 TZ_IN -307.0 334.0

4 VEE2 0 0

5 VEE1 134.0 0 6 VEE1 364.0 0 7 VEE1 498.0 0 8 VCC 697.0 0 9 OUTN 697.0 174.0 10 OUTP 697.0 304.0 11 VCC 697.0 698.0

LightCharger™ 2.5 Gb/s Transimpedance Amplifier Final 43-DST-01 § Rev 1.5 § May 24/02 7 of 9 The diagram below shows the bondpad configuration of the SE1030W Transimpedance Amplifier. Note that the diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. There are three VCC and three VEE1 pads for ease of wire bondi ng; the VCC and VEE1 pads respectively are connected on - chip and only one pad of each type is required to be bonded out. Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B. Top View Side View 115.0249.0334.0 123.0 944.0 1250.0 123.0 174.0 130.0 394.0400.0 1004.0 All Dimensions in Microns (µm) Top View Side View 115.0249.0334.0 123.0 944.0 1250.0 123.0 174.0 130.0 394.0400.0 1004.0 All Dimensions in Microns (µm)

LightCharger™ 2.5 Gb/s Transimpedance Amplifier Final 43-DST-01 § Rev 1.5 § May 24/02 8 of 9 Applications Information Note that all VCC pads (1, 8, 11) are connected on-chip, as are the VEE1 pads (5, 6, 7), and only one pad of each type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it is recommended that all power pads are wire bonded. The VEE2 pad is not connected on chip to VEE1 and must be bonded out separately. TZ Amplifier SE1030W TZ_IN VCC OUTP OUTN VEE1 VEE2 1 8 11 4 5 6 7 0 V +3.3 V PIN Bias PIN 1 nF min 1 nF min To 50 O loads, AC coupled

LightCharger™ 2.5 Gb/s Transimpedance Amplifier Final 43-DST-01 § Rev 1.5 § May 24/02 9 of 9 http://www.sige.com Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933

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San Jose, CA Cambourne USA 95112 Cambridge CB3 6DP Phone: +1 408 998 5060 Phone: +44 1223 598 444 Fax: +1 408 998 5062 Fax: +44 1223 598 035 Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor reserves the right to change information at any time without notification. Preliminary The datasheet conta ins information from the design target specification. SiGe Semiconductor reserves the right to change information at any time without notification. Final The datasheet contains information from the final product specification. SiGe Semiconductor reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. LightCharger™ is a trademark owned by SiGe Semiconductor. Copyright 2002 SiGe Semiconductor All Rights Reserved