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Technical content
Features
z Array of surge rated diodes with internal TVS Diode z Small package (2.4 x 2.2mm) saves board space z Protects up to four I/O lines & power line z Low capacitance (<1pF) for high-speed interfaces z No insertion loss to 2.0GHz z Low leakage current and clamping voltage z Low o perating voltage: 5.0V z Solid-state sili con-avalanche technology IEC61000-4-2(ESD) 15kV(air), 8kV(Contact) IEC61000-4-4(EFT) 40A(5/50ns) IEC61000-4-5(Surg e)24A(8/20us),Level2(Line-G round)& Level 2(Line- Line) Functional diagram SOT23-6 WILLAS ELECTRONIC CORP.2012-09 SE0504 z
Symbol Parameter Value Units PPK Peak Pulse Power (tp = 8/20μs) 120 W IPP Peak Pulse Current (tp = 8/20μs) 6 A TJ Operating Temperature -55 to +125 °C Tstg Storage Temperature Range -55 to +150 °C
Electrical Characteristics
Min. Typ. Max. IT VRWM IR Typ. (Note1)Part Numbers V V V mA V µA pF SE0504 6.0 6.6 7.2 1 5 3 0.6 Note 1: I/O pins are pin 1, 3, 4, and 6 Typical Characteristics Fig1. Non-Repetitive Peak Pulse Power vs. Pulse Time Fig2. Power Derating Curve Fig3. Pulse Waveform Fig4. Clamping Voltage vs. Peak Pulse Current WILLAS ELECTRONIC CORP.2012-09 Low Capacitance TVS Array SE0504
Fig5. Forward Voltage vs. peak Pulse Current Fig6. Capacitance vs. Reverse Voltage (Normalized to 0V) SOT-23-6 Mechanical Data WILLAS ELECTRONIC CORP.2012-09 Low Capacitance TVS Array SE0504 Type number Marking code SE0504 F54 Marking .020(0.50) .040(1.05) .036(0.90) .057(1.45) .000(0.01) .051(1.30) .051(1.30) .070(1.75) .110(2.80) .122(3.10) .067(1.70) .083(2.10) .098(2.50) .118(3.00) Dimensions in inches and (millimeters)