SDW3045 SKTECHNOLGY | Alldatasheet
Document overview
- Manufacturer or author: connie_chung
- PDF pages: 5
Technical content
Features
Tc=25 unless otherwise noted Thermal Characteristics DFN2X2 Dual 2EP Pin Configuration
Applications
D D G G S S D S MB / VGA / Vcore POL Applications SMPS 2 nd SR SDW3045 Marking : W B 1 of 5 REV.08
Min. T y p . Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D =250uA --- --- V BV DSS T J BV DSS Temperature Coefficient Reference to 25 , I D =1mA --- 0.02 --- I DSS Drain-Source Leakage Current V DS =30V , V GS =0V , T J =25 --- --- uA V DS =24V , V GS =0V , T J =125 --- --- uA I GSS Gate-Source Leakage Current V GS 20V , V DS =0V --- --- 100 nA On Characteristics R DS(ON) Static Drain-Source On-Resistance V GS =10V , I D =3A --- m V GS =4.5V , I D =2A --- m V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.2 1.5 2.5 V V GS(th) V GS(th) Temperature Coefficient --- -3.2 --- mV/ gfs Forward Transconductance V DS =10V , I D =3A --- --- S Dynamic and switching Characteristics Q g Total Gate Charge V DS =24V , V GS =10V , I D =3A --- 5.1 nC Q gs Gate-Source Charge --- 0.4 1.0 Q gd Gate-Drain Charge --- 2.2 4.5 T d(on) Turn-On Delay Time V DD =15V , V GS =10V , R G I D =1A --- 2.6 ns T r Rise Time --- 8.8 T d(off) Turn-Off Delay Time --- 18.4 T f Fall Time --- 5.1 C iss Input Capacitance V DS =25V , V GS =0V , F=1MHz --- 333 660 pF C oss Output Capacitance --- 100 C rss Reverse Transfer Capacitance --- Rg Gate resistance V GS =0V, V DS =0V, f=1MHz --- 0.95 S y m b o l Parameter Conditions Min. T y p . Max. Unit I S Continuous Source Current V G D =0V , Force Current --- --- 4.5 A I SM Pulsed Source Current --- --- A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25 --- --- V Note : Repetitive Rating : Pulsed width limited by maximum junction temperature. The data tested by pulsed , pulse width 300us , duty cycle 2 % . Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings SDW3045 2 of 5 REV.08
F ig.1 Continuous Drain Current vs. T J Fig. Normalized V th vs. T J T J Juction Temperature ( I D Continuous Drain Current A Normalized On Resistance m Fig.2 Normalized RDSON vs. T J T J Junction Temperature ( Normalized Gate Threshold V oltage V V GS Gate to Source V oltage V Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (R Θ JA Square Wave Pulse Duration (s) I D Continuous Drain Current A V DS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Fig. Normalized Transient Re sponse T J Junction Temperature ( SDW3045 3 of 5 REV.08
T d(on) T r T on T d(off) T f T off V DS V GS 90% 10% I AS V GS BV DSS V DD EAS= L x I AS x BV DSS BV DSS DD F ig. EAS Waveform F ig. Switching Time Waveform SDW3045 4 of 5 REV.08
PACKAGE INFORMATION
REV.08