SDW2065 SKTECHNOLGY | Alldatasheet
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Technical content
Features
Suit for 1.8V Gate Drive Applications
Applications
V DS Drain Source Voltage V V GS Gate Sou r ce Voltage V I D Drain Current – Continuous (T C =25℃) 6.5 A Drain Current – Continuous (T C =100℃) 4.3 A I DM Drain Current Pulsed 20.8 A P D Power Dissipation (T C =25℃) 1.78 W Power Dissipation Derate above 25 0.02 T STG Storage Temperature Range 55 to 150 T J Operating Junction Temperature Range 55 to 150 Symbol Parameter Typ. Max. Unit R θ JA Thermal Resistance Junction to Ambient 100 Thermal Characteristics DFN2X2 Dual 2EP Pin Configuration Absolute Maximum Ratings Tc=25 unless otherwise noted G SDW2065 Marking : W A 1 of 5 REV.08
Dynamic and switching Characteristics Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current V G D =0V , Force Current 3.8 A I SM Pulsed Source Current 7.6 A V SD Diode Forward Voltage V GS =0V , I S =1A , T J =25 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.
Electrical Characteristics
J =25 , unless otherwise) noted) Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain Source Breakdown Voltage V GS =0V , I D =250uA V ᇞ B V DS S ᇞ T J BV DSS Temperature Coefficient Reference to 25 , I D =1mA 0.02 I DSS Drain -Source Leakage Current V DS =20V , V GS =0V , T J =25 uA V DS =16V , V GS =0V , T J =125 uA I GSS Gate Source Leakage Current V GS 10V , V DS =0V 100 nA R DS(ON) Static Drain -Source On-Resistance V GS =4.5V , I D =3A mΩ V GS =2.5V , I D =2A mΩ V GS =1.8V , I D =1.5A mΩ V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 0.3 0.6 V ᇞ V GS (th) V GS(th) Temperature Coefficient mV/ gfs Forward Transconductance V DS =10V , I D =2A 4.4 S Q g Total Gate Charge 2 , 3 V DS =10V , V GS =4.5V , I D =3A 5.8 nC Q gs Gate Source Charge 2 , 3 0.6 1.5 Q gd Gate Drain Charge 2 , 3 1.5 T d(on) Turn -On Delay Time 2 , 3 V DD =10V , V GS =4.5V , R G =25 I D =1A --- 2.9 ns T r Rise Time 2 , 3 8.4 T d(off) Turn Off Delay Time 2 , 3 19.2 T f Fall Time 2 , 3 5.6 C iss Input Capacitance V DS =15V , V GS =0V , F=1MHz 315 600 pF C oss Output Capacitance --- 50 80 C rss Reverse Transfer Capacitance SDW2065 2 of 5 REV.08
T J , Junction Temperature ( S I D ,ContinuousDrainCurrent(A) No rmalizedOnResistance(m ) NormalizedGateThresholdVoltage(V) V G G ateto S ource Vo ltage (V) Fig.3 Normalized V th vs. T J NormalizedThermalResponse(R θJA Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform I D ,ContinuousDrainCurrent(A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area T J , Junction Temperature ( Fig.2 Normalized RDSON vs. T J T C , Case Temperature ( Fig.1 Continuous Drain Current vs. T C SDW2065 3 of 5 REV.08
V DD I AS V GS r V DS EAS= 1
2 L x I
90% BV DSS DD V GS T T 10% d(on) T on T d(off) T f T off Fig.7 Switching Time Waveform Fig.8 EAS Waveform SDW2065 4 of 5 REV.08
PPAK2X2 Dual 2EP PACKAGE INFORMATION SDW2065 5 of 5 REV.08