SDUR3020WT SMCDIODE | Alldatasheet

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Data Sheet N0164 Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR3020WT SDUR3020WT ULTRAFAST RECTIFIER * Pulsewidth<300µs, dutycycle<2% Applications: Circuit Diagram Features: Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 200 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=140°C, rectangularwaveform 15(PerLeg) A30(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse 110 A Electrical Characteristics: Characteristics Symbol Condition Min. Typ. Max. Units Breakdownvoltage, Blockingvoltage VBR VR IR =50μA 200 - - V ForwardVoltageDrop (PerLeg)* VF1 @15A,Pulse,TJ=25C - 0.85 1.05 V VF2 @15A,Pulse,TJ=125C - 0.74 0.90 V ReverseCurrent (PerLeg)* IR1 @VR =ratedVR,TJ =25C - 0.04 10 μA IR2 @VR =ratedVR ,TJ =125C - 30 500 uA ReverseRecoveryTime(PerLeg) trr IF=500mA,IR=1A,andIrm=250mA - 32 35 ns  Antiparallel diode for high frequency switching devices  Anti saturation diode  Snubber diode  Free wheeling diode in converters and motor control circuits  Rectifiers in switch mode power supplies (SMPS)  Inductive heating and melting  Uninterruptible power supplies (UPS)  Ultrasonic cleaners and welders  Ultra-Fast switching  High current capability  Low reverse leakage current  High surge current capability  This is a Pb − free device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request TO-247AD

Data Sheet N0164 Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR3020WT Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case RJC DCoperation 1.6 C/W ApproximateWeight wt - 6.28 g CaseStyle TO-247AD Thermal-Mechanical Specifications: Ratings and Characteristics Curves

Data Sheet N0164 Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR3020WT Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackaging Specification. Mechanical Dimensions TO-247AD SYMBOL Millimeters MIN. TYP. MAX. A 4.80 5.00 5.20 A1 2.20 2.41 2.61 A2 1.90 2.00 2.10 b 1.10 1.20 1.40 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.50 0.60 0.75 D 20.30 21.00 21.20 D1 16.55 D2 1.20 E 15.45 15.80 16.00 E1 13.30 E2 5.00 E3 2.50 e 5.44 L 19.42 19.92 20.70 L1 4.13 P 3.50 3.60 3.70 P1 7.1 7.40 P2 2.50 Q 5.80 S 6.05 6.15 6.25 T 10.00 U 6.20 Ordering Information: Device Package Shipping SDUR3020WT TO-247AD(Pb-Free) 25pcs/tube Tube Specification Marking Diagram WhereXXXXX isYYWWL SDUR =Device Type 30 =ForwardCurrent(30A) 20 =ReverseVoltage(200V) WT =Configuration SSG = SSG YY =Year WW =Week L =Lot Number Cautions:Molding resin Epoxy resin UL:94V-0

Data Sheet N0164 Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR3020WT DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..