SDUR1060CT SMCDIODE | Alldatasheet

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Technical content

Data Sheet N0265, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR1060CT SDUR1060CT ULTRAFAST RECTIFIER * Pulsewidth<300µs, dutycycle<2%

Applications

Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 600 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=100°C, rectangularwaveform 5(PerLeg) A10(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse 60 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @5A,Pulse,TJ =25C 1.14 1.55 V VF2 @5A,Pulse,TJ =125C 0.95 1.45 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR,TJ =25C 0.007 5 μA IR2 @VR =ratedVR, TJ =125C 3 500 μA ReverseRecoveryTime(PerLeg) trr IF=500mA,IR=1A,andIrm=250mA 42 50 ns  Antiparallel diode for high frequency switching devices  Anti saturation diode  Snubber diode  Free wheeling diode in converters and motor control circuits  Rectifiers in switch mode power supplies (SMPS)  Inductive heating and melting  Uninterruptible power supplies (UPS)  Ultrasonic cleaners and welders  Ultra-Fast switching  High current capability  Low reverse leakage current  High surge current capability  This is a Pb − free device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request TO-220AB

Data Sheet N0265, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR1060CT Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case RJC DCoperation 4.5 C/W ApproximateWeight wt - 2 g CaseStyle TO-220AB Thermal-Mechanical Specifications: Ratings and Characteristics Curves 100 1000 0 5 10 15 20 25 30 35 40 Reverse Voltage. (V) Junction Capacitance. (PF) TJ=125℃ TJ=25℃ Fig.3-Typical Forward Voltage Drop Characteristics Fig.1-Typical Junction Capacitance TJ=25℃

Data Sheet N0265, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR1060CT Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging Specification. Mechanical Dimensions TO-220AB Symbol Dimensions in millimeters Min Typical Max A 4.42 4.57 4.72 A1 1.17 1.27 1.37 A2 2.52 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 D 14.94 15.24 15.54 D1 8.85 9.00 9.15 E 10.01 10.16 10.31 e 2.54 e1 4.98 5.06 5.18 H1 6.04 6.24 6.44 L 12.7 13.56 13.80 L1 3.56 3.5 3.96 ΦP 3.74 3.84 4.04 Q 2.54 2.74 2.94 Θ1 7° Θ2 3° Θ3 4° Tube Specification Marking Diagram

Ordering Information

SDUR1060CT TO-220AB(Pb-Free) 50pcs/tube WhereXXXXX is YYWWL SDUR =Device Type 10 =ForwardCurrent (10A) 60 =Reverse Voltage(600V) CT =Configuration SSG =SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0

Data Sheet N0265, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR1060CT DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..