SDUR1030CT SMCDIODE | Alldatasheet

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Technical content

Data Sheet N0363, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR1030CT SDUR1030CT ULTRAFAST RECTIFIER * Pulsewidth<300µs, dutycycle<2%

Applications

Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 300 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=112°C, rectangularwaveform 5(PerLeg) A10(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse,TJ =25C 70 A Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop(PerLeg)* VF1 @5A,Pulse,TJ =25C 0.96 1.30 V VF2 @5A,Pulse,TJ =125C 0.88 1.25 V ReverseCurrent(PerLeg)* IR1 @VR =ratedVR,TJ =25C 0.004 30 μA IR2 @VR =ratedVR, TJ =125C 0.013 1 mA ReverseRecoveryTime(PerLeg) trr IF=500mA,IR=1A,andIrm=250mA 36 45 ns  Antiparallel diode for high frequency switching devices  Anti saturation diode  Snubber diode  Free wheeling diode in converters and motor control circuits  Rectifiers in switch mode power supplies (SMPS)  Inductive heating and melting  Uninterruptible power supplies (UPS)  Ultrasonic cleaners and welders  Ultra-Fast switching  High current capability  Low reverse leakage current  High surge current capability  Terminals finish: 100% Pure Tin  This is a Pb − free device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request TO-220AB

Data Sheet N0363, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR1030CT Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C TypicalThermalResistanceJunctionto Case RJC DCoperation 3.5 C/W ApproximateWeight wt - 2 g CaseStyle TO-220AB Thermal-Mechanical Specifications: Ratings and Characteristics Curves Fig.3-Typical Instantaneous Forward Voltage Characteristics Fig.1-Typical Junction Capacitance Fig.2-Typical Reverse Characteristics TJ=25℃ TJ=25℃ TJ=125℃ TJ=25℃ TJ=125℃

Data Sheet N0363, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR1030CT Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging Specification. Mechanical Dimensions TO-220AB Symbol Dimensions in millimeters Min Typical Max A 3.56 - 4.83 A1 0.51 - 1.40 A2 2.03 - 2.92 b 0.38 - 1.02 b1 1.14 - 1.78 c 0.31 - 0.61 D 14.22 - 16.51 D1 8.38 - 9.42 E 9.65 - 10.67 e - 2.54 - e1 - 5.08 - H1 5.84 - 6.86 L 12.70 - 14.73 L1 - - 6.35 ΦP - 3.56 - Q 2.54 - 3.43 Tube Specification Marking Diagram

Ordering Information

SDUR1030CT TO-220AB(Pb-Free) 50pcs/tube WhereXXXXX is YYWWL SDUR =Device Type 10 =ForwardCurrent (10A) 30 =Reverse Voltage(300V) CT =Configuration SSG =SSG YY =Year WW =Week L =Lot Number Cautions：Molding resin Epoxy resinUL:94V-0

Data Sheet N0363, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SDUR1030CT DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..