SDT600 SSOUSA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
The SDT600 consists of a phototransistor optically coupled to a light emitting diode. Optical coupling between the input LED and output phototransistor allows for high isolation levels while maintaining low-level DC signal control capability. The SDT600 provides an optically isolated method of controlling many interface applications such as telecommunications, industrial control and instrumentation circuitry.
DESCRIPTION
OPTIONS/SUFFIXES* SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS* APPROVALS High input-to-output isolation package (5000 Vrms)• Low input power consumption• High stability•
6 Pin DIP Package w/output Base Connection•
CTR range 50-600%• Switch mode power supplies• Copiers, registers, vending machines• Computer terminals, PLCs• Telecom / Datacom• Home appliances• Digital logic inputs• .04" (10.16mm) lead spacing option (VDE0884)• -H Surface Mount Leadform Option• -S Tape and Reel Option• -TR NOTE: Suffixes listed above are not included in marking on device for part number identification. PARAMETER UNIT MIN TYP MAX Storage Temperature °C -55 125 Operating Temperature °C -40 100 Continuous Input Current mA 50 Transient Input Current A 1 Reverse Input Control Voltage V 6 Output Power Dissipation mW 500 *The values indicated are absolute stress ratings. Functional operation of the device is not implied at these or any conditions in excess of those defined in electrical characteristics section of this document. Exposure to Absolute Ratings may cause permanent damage to the device and may adversely affect reliability. UL C-UL Approved, File # E201932• VDE Approved, Lic 40011227• © 2004 Solid State Optronics • San José, CA Page 1 of 6 SDT600 rev 1.40 (10/25/2004) 1. Anode 2. Cathode 3. NC 4. Emitter 5. Collector 6. Base
ELECTRICAL CHARACTERISTICS - 25°C PARAMETER UNIT MIN TYP MAX TEST CONDITIONS INPUT SPECIFICATIONS Forward Voltage V 1.2 1.4 If = 20mA Reverse Current µ 10 Vr = 4VA OUTPUT SPECIFICATIONS Collector-Emitter Breakdown Voltage V 60 Ic = 10uA Emitter-Collector Breakdown Voltage V 6 Ie = 10uA Dark Current µ 0.1 Vce = 20VA Floating Capacitance p 0.6 1 V = 0V, f=1.0MHzF Saturation Voltage V 0.1 0.3 If = 20mA, Ic = 1mA Current Transfer Ratio % 60 600 If = 2mA, Vce = 5V Rise Time µ 5 Ic = 2mA, Vcc = 5V, Rc = 100 ohmss Fall Time µ 4 Ic = 2mA, Vcc = 5V, Rc = 100 ohmss COUPLED SPECIFICATIONS Isolation Voltage V 5000 T = 1 minute Isolation Resistance G 50Ω CTR CLASSIFICATION -A % 60 160 -B % 130 260 -C % 200 400 -D % 300 600 -E % 60 600 © 2004 Solid State Optronics • San José, CA Page 2 of 6 SDT600 rev 1.40 (10/25/2004)
Collector-Emitter Saturation Voltage vs. Forward Current N = 100, Ambient Temperature = 25°C SDT600 Current Transfer Ratio vs. Forward Current N = 100, Ambient Temperature = 25°C SDT600 Collector Power Dissipation vs. Ambient Temperature N = 100 SDT600 Collector Dark Current vs. Ambient Temperature N = 100 60 63 66 69 72 75 78 81 Breakdown Voltage (V) Device Count SDT6 00 Typical Vceo Distribution N = 100, Ambient Temperature = 25°C SDT600 Forward Current vs. Ambient Temperature © 2004 Solid State Optronics • San José, CA Page 3 of 6 SDT6 00 rev 1.40 (10/25/2004) Forward Current IF (mA) Collector-emitter Saturation Voltage Vce (V) Ambient Temperature Ta (°C) Collector Power Dissipation Pc (mW) Ambient Temperature Ta (°C) Collector Dark Current Iceo (A) N = 100, Ambient Temperature = 25°C Ambient Temperature Ta (°C) Forward Current IF (mA) Forward Current IF (mA) Current transfer ratio CTR (%)
Collector Current vs. Collector-Emitter Voltage N = 100, Ambient Temperature = 25°C SDT600 Forward Current vs. Forward Voltage N = 100, Ambient Temperature = 25°C SDT600 Rise Time vs. Load Resistance N = 100, Ambient Termperature = 25°C SDT600 Fall Time vs. Load Resistance N = 100, Ambient Temperature = 25°C © 2004 Solid State Optronics • San José, CA Page 4 of 6 SDT600 rev 1.40 (10/25/2004) Forward Voltage VF (V) Forward Current IF (mA) Load Resistance RL(K ohm) Response Rise Time (us) Load Resistance RL(K ohm) Response Rise Time (us) Collector-emitter Voltage VCE (V) Collector Current Ic (mA)
MECHANICAL DIMENSIONS (in mm) © 2004 Solid State Optronics • San José, CA Page 5 of 6 SDT400 rev 1.40 (10/25/2004) 6 PIN H TYPE WITH 0.4" LEAD SPACING (SDT600-H) 6PIN SURFACE MOUNT DEVICE (SDT600-S)6 PIN DUAL IN-LINE PACKAGE (SDT600) TOLERANCE :+ 0.25mm
Solid State Optronics (SSO) makes no warranties or representations with regards to the completeness and accuracy of this document. SSO reserves the right to make changes to product description, specifications at any time without further notice. SSO shall not assume any liability arising out of the applicat ion or use of any product or circuit described herein. Neither ci rcuit patent licenses nor indemnity are expressed or implied. Except as specified in SSO's Standard Terms & Conditions, SSO disclaims liability for consequential or other damage, and we mak e no other warranty, expressed or implied, including merchantability and fitness for particular use. DISCLAIMER LIFE SUPPORT POLICY SSO does not authorize use of its devices in life support applications wherein failure or malfunction of a device may lead to personal injury or death. Users of SSO devices in life support applications assume all risks of su ch use and agree to indemnify SSO against any an d all damages resulting from such use. Life support devices are def ined as devices or systems which, (a) are intended for surgical im plant into the body, or (b) support or sustain life, and (c) whose failure to perf orm when used properly in accordance with instructions for u se can be reasonably expected to result in significant injury to the user, or (d) a critical component in any component of a life support device or system whose failure can be reasonably expected to c ause failure of the life support device or system, or to affect its safety or effe ctiveness. © 2004 Solid State Optronics • San José, CA Page 6 of 6 SDT600 rev 1.40 (10/25/2004)