SDT517

SDT517 SECOS | Alldatasheet

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Technical content

N & P-Ch Enhancement Mode MOSFET N-Ch: 6A, 12V , R DS(ON) 24 m ΩΩ ΩΩ P-Ch: -4.1A, -12V , R DS(ON) 45 m ΩΩ ΩΩ 12-Sep-2017 Rev. B Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

FEATURES

/circle6 Surface Mount Package /circle6 Super High Density Cell Design for Extremely Low RDS(ON) /circle6 Exceptional On-resistance and Maximum DC Current Capability

APPLICATIONS

/circle6 Power Management In Note Book /circle6 Portable Equipment /circle6 DC/DC Converter /circle6 Load Switch MARKING 517 /box4/box4 /box4/box4 /box4/box4 /box4/box4

PACKAGE INFORMATION

(TA=25° C unless otherwise specified) Rating Parameter Symbol N-ch P-ch Unit Drain-Source Voltage VDS 12 -12 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current 1 ID 6 -4.1 A Pulsed Drain Current(tp=10us) IDM 24 -16.4 A Continous Source-Drain Diode Current I S 6 -4.1 A Lead Temperature for Soldering Purposes (1/8’’ from case for 10 s) TL 260 ° C Operating Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 R θJA 167 ° C / W Package MPQ Leader Size DFN2×2-6L-J 3K 7 inch DFN2x2-6L-J A 2.00 BSC. G

0.30 BSC

B 2.00 BSC. H 0.20 BSC - C 0.675 0.75 0.80 J 0 - 0.06 E F 0.65BSC P 0.52 0.65 0.72 Date Code

N & P-Ch Enhancement Mode MOSFET N-Ch: 6A, 12V , R DS(ON) 24 m ΩΩ ΩΩ P-Ch: -4.1A, -12V , R DS(ON) 45 m ΩΩ ΩΩ 12-Sep-2017 Rev. B Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CH ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage BV DSS 12 - - V V GS =0, I D =250 µA Zero Gate Voltage Drain Current IDSS - - 1 µA V DS =16V, V GS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0,V GS = ±12V Gate-Threshold Voltage 2 V GS(th) 0.5 - 1 V V DS =V GS , I D =250 µA - - 24 V GS =10V, I D =6A - - 27 V GS =4.5V, I D =5A - - 42 V GS =2.5V, I D =4A Drain-Source On-Resistance 2 R DS(ON) - - 74 m Ω VGS =1.8V, I D =2A Forward Transfer conductance 2 g FS 4 - - S V DS =5V, ID =3.8A Diode forward voltage V SD - - 1 V IS=1A, V GS =0V Dynamic Characteristics Input Capacitance C iss - 630 - Output Capacitance C oss - 164 - Reverse Transfer Capacitance C rss - 137 - pF VDS =10V VGS =0 f=1MHz Switching Characteristics 3 Turn-On Delay Time T d(ON) - 5.5 - Rise Time T r - 14 - Turn-Off Delay Time T d(OFF) - 29 - Fall Time T f - 10.2 - nS VDS =10V VGS =5V R G =6 Ω R L=1.7 Ω Total Gate Charge Q g - 12 - Gate-Source Charge Q gs - 1 - Gate-Drain Charge Q gd - 2 - nC VDS =10V VGS =10V ID =6A

N & P-Ch Enhancement Mode MOSFET N-Ch: 6A, 12V , R DS(ON) 24 m ΩΩ ΩΩ P-Ch: -4.1A, -12V , R DS(ON) 45 m ΩΩ ΩΩ 12-Sep-2017 Rev. B Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CH ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage BV DSS -12 - - V V GS =0, I D = -250 µA Zero Gate Voltage Drain Current IDSS - - -1 µA V DS = -8V, V GS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0,V GS = ±8V Gate-Threshold Voltage 2 V GS(th) -0.5 - -0.9 V V DS =V GS , I D = -250 µA - - 60 V GS = -2.5V, I D = -3A Drain-Source On-Resistance 2 R DS(ON) - - 90 m Ω VGS = -1.8V, I D = -2A Forward Transfer conductance 2 g FS 6 - - S V DS = -5V, ID = -4.1A Diode forward voltage V SD - - -1.2 V IS= -3.3A, V GS =0V Dynamic Characteristics Input Capacitance C iss - 740 - Output Capacitance C oss - 290 - Reverse Transfer Capacitance C rss - 190 - pF VDS = -4V VGS =0 f=1MHz Switching Characteristics 3 Turn-On Delay Time T d(ON) - 20 - Rise Time T r - 53 - Turn-Off Delay Time T d(OFF) - 48 - Fall Time T f - 20 - nS VDD = -4V VGEN = -4.5V ID = -3.3A R G =1Ω R L=1.2Ω Total Gate Charge Q g - 9 - Gate-Source Charge Q gs - 1.2 - Gate-Drain Charge Q gd - 1.6 - nC VDS = -4V VGS = -2.5V ID = -4.1A Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300 µs, duty cycle ≤2%. 3. Switching characteristics are independent of operating junction temperature.

N & P-Ch Enhancement Mode MOSFET N-Ch: 6A, 12V , R DS(ON) 24 m ΩΩ ΩΩ P-Ch: -4.1A, -12V , R DS(ON) 45 m ΩΩ ΩΩ 12-Sep-2017 Rev. B Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CH CHARACTERISTIC CURVE

N & P-Ch Enhancement Mode MOSFET N-Ch: 6A, 12V , R DS(ON) 24 m ΩΩ ΩΩ P-Ch: -4.1A, -12V , R DS(ON) 45 m ΩΩ ΩΩ 12-Sep-2017 Rev. B Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CH CHARACTERISTIC CURVE