SDT4U40EP3
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 5
Technical content
Document number: DS42900 Rev. 3 - 2 1 of 5 www.diodes.com November 2021 © Diodes Incorporated SDT4U40EP3 NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT 4A TRENCH SCHOTTKY BARRIER RECTIFIER CHIP SCALE PACKAGE Product Summary VRRM (V) IO (A) VF Max (V) IR Max (µ A) 40 4.0 0.55 150 Description and Applications The SDT4U40EP3 is a 40-volt 4A trench Schottky barrier rectifier that is optimized for low forward voltage drop and low leakage current, housed in a compact chip scale packag e (CSP) that occupies only 1.28mm2 board space with low profile. The low thermal resistance enables designers to meet design challenges of increasing efficiency whilst at the same time reducing board space. It is ideally suited for use in portable applications as a: Blocking Diode Boost Diode Switching Diode Reverse Protection Diode Features and Benefits Low forward voltage (VF) minimizes conduction losses and improves efficiency. Reduced high temperature reverse leakage; Increased reliability against thermal runaway failure in high temperature operation. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: X3-TSN1608-2 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiAu Bump. Solderable per MIL-STD-202, Method 208 Polarity: Cathode Dot Weight: 0.001 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier SDT4U40EP3-7B X3-TSN1608-2 10,000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code H I J K L M N O P R S T T1 = Product Type Marking Code Y = Date Code Marking Y or Y = Year (ex: I = 2021) Dot Denotes Cathode Pin CathodeAnode Pin #1 Cathode Notch Device Schematic X T1 Y Pin 1
Document number: DS42900 Rev. 3 - 2 2 of 5 www.diodes.com November 2021 © Diodes Incorporated SDT4U40EP3 NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT Maximum Ratings (@TA = +25° C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V Average Rectified Output Current IO 4.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 28 A ESD (Human Body Model) ESD (Machine Model) ESD 8 0.4 kV Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) RθJA 150 °C/W Typical Thermal Resistance Junction to Ambient (Note 6) RθJA 55 °C/W Typical Thermal Resistance Junction to Case (Note 5) RθJC 35 °C/W Typical Thermal Resistance Junction to Case (Note 6) RθJC 10 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Forward Voltage Drop VF — 0.40 0.45 V IF = 2.0A, TJ = +25°C Reverse Current (Note 7) IR — 30 150 µA VR = 40V, TJ = +25°C Junction Capacitance CT — 295 — pF VR = 4V, f = 1.0MHz 6. Device mounted on 1inch sq. copper pad, 2oz. 7. Short duration pulse test used to minimize self-heating effect.
Document number: DS42900 Rev. 3 - 2 4 of 5 www.diodes.com November 2021 © Diodes Incorporated SDT4U40EP3 NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT Package Outline Dimensions (Note 8) Please see http://www.diodes.com/package-outlines.html for the latest version. X3-TSN1608-2 X3-TSN1608-2 Dim Min Max Typ A 0.20 0.30 0.25 A1 0.00 0.02 -- b 0.55 0.65 0.60 D 1.56 1.64 1.60 E 0.76 0.84 0.80 k -- -- 0.282 L3 0.25 0.35 0.30 L3a 0.90 1.00 0.95 R -- -- 0.10 All Dimensions in mm Note 8: Device side walls are electrically active bare silicon. Avoid contact of solder or flux on the side walls during the PCB assembly process. Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X3-TSN1608-2 Dimensions Value (in mm) X 0.385 X1 1.035 X2 1.622 Y 0.690 D b( 2x)E k L3a Seating PlaneA R X Y
Document number: DS42900 Rev. 3 - 2 5 of 5 www.diodes.com November 2021 © Diodes Incorporated SDT4U40EP3 NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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