STD49 SIRECTIFIER | Alldatasheet

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Thyristor-Diode Modules, Diode-Thyristor Modules Type STD/SDT49GK08 STD/SDT49GK12 STD/SDT49GK14 STD/SDT49GK16 STD/SDT49GK18 VRRM VDRM V 800 1200 1400 1600 1800 VRSM VDSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit TVJ=TVJM TC=85oC; 180o sine 49 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 1150 1230 1000 1070 AITSM, IFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 6600 6280 5000 4750 A2s i2dt (di/dt)cr 150 500 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=300us 5 W PGAV 0.5 W ITRMS, IFRMS ITAVM, IFAVM oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M5) 2.5-4.0/22-35 2.5-4.0/22-35 Nm/lb.in. Weight 90 g TVJ=TVJM repetitive, IT=150A f=50Hz, tp=200us VD=2/3VDRM IG=0.45A non repetitive, IT=ITAVM diG/dt=0.45A/us VRGM 10 V Typical including screws

Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values Unit VVT, VF IT, IF=200A; TVJ=25oC 1.75 VTO For power-loss calculations only (TVJ=125oC) 0.85 V rT 5.3 m VD=6V; TVJ=25oC TVJ=-40oCVGT 1.5 1.6 V VD=6V; TVJ=25oC TVJ=-40oCIGT 100 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 200 mA TVJ=25oC; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us 450 mAIL per thyristor/diode; DC current per moduleRthJC 0.53

0.265 K/W

per thyristor/diode; DC current per moduleRthJK 0.73

0.365 K/W

dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM 5 mA TVJ=25oC; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/ustgd 2 us TVJ=TVJM; IT=120A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=20V/us; VD=2/3VDRMtq 150 us uCQS TVJ=TVJM; IT, IF=50A; -di/dt=0.64A/us 90 IRM 11 A

FEATURES

  • International standard package * Planar passivated chips * Isolation voltage 3600 V~ ADVANTAGES * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

  • DC motor control * Softstart AC motor controller * Light, heat and temperature control * Copper base plate

Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 100 101 102 103 104 0.1 IG VG mA 1: IGT, TVJ = 125 C 2: IGT, TVJ = 25 C 3: IGT, TVJ = -40 C V 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125 C 5 6 Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 4 Gate trigger characteristics 10 100 1000 100 1000 mA IG s tgd Limittyp. TVJ = 25 C Fig. 6 Gate trigger delay time 3 x STD/SDT49

Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJC for various conduction angles d: dR thJC (K/W) DC 0.53 180oC 0.55 120oC 0.58 60oC 0.6 30oC 0.62 Constants for ZthJC calculation: iR thi (K/W) ti (s) 1 0.015 0.0035 2 0.026 0.02 3 0.489 0.195 RthJK for various conduction angles d: dR thJK (K/W) DC 0.73 180oC 0.75 120oC 0.78 60oC 0.8 30oC 0.82 Constants for ZthJK calculation: iR thi (K/W) ti (s) 1 0.015 0.0035 2 0.026 0.02 3 0.489 0.195 4 0.2 0.68 3 x STD/SDT49 STD/SDT49 STD/SDT49