SDT470 SSOUSA | Alldatasheet
Document overview
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Technical content
The SDT470 consists of a phototransistor optically coupled to a light emitting diode. Optical coupling between the input LED and output phototransistor allows for high isolation levels while maintaining low-level DC signal control capability. The SDT470 provides an optically isolated method of controlling many interface applications such as telecommunications, industrial control and instrumentation circuitry.
DESCRIPTION
High input-to-output isolation package (2500 Vrms)• Low input power consumption• High stability• Ultra miniature 4-pin small outline package• CTR: 80%-600%• Registers, copiers, Automatic Vending Machines• System appliances, measuring instruments• Computer terminals, PLCs• Telecommunications, telephones• Home Appliances• Digital logic inputs• Microprocessor inputs• Switching power supply, laser beam printers, etc.• Tape and Reel• -TR PARAMETER UNIT MIN TYP MAX Storage Temperature °C -55 125 Operating Temperature °C -40 100 Input Forward Current mA 50 Input Peak Forwad Current A 1 Reverse Input Voltage V 6 Output Power Dissipation mW 120 + Input - Input Collector Emitter UL and C-UL approved File #E201932• rev 1.0 Solid State Optronics, Inc. 1.888.377.4776 www.ssousa.com
ELECTRICAL CHARACTERISTICS - 25° PARAMETER UNIT MIN TYP MAX TEST CONDITIONS INPUT SPECIFICATIONS Forward Voltage V 1.2 1.4 If = 5mA Reverse Current µ 5 Vr = 5VA OUTPUT SPECIFICATIONS Collector-Emitter Breakdown Voltage V 80 Ic = 1uA Emitter-Collector Breakdown Voltage V 5 If = 100uA Dark Current µ 0.1 Vce = 20V, IF=0A Floating Capacitance p 0.6 1 V= 0V, f=1.0 MHzF Vce Saturation Voltage V 0.1 0.3 If = 10mA, Ic = 1mA Current Transfer Ratio % 80 600 If = 5mA, Vce = 5V Rise Time µ 3 Ic= 2mA, Vce =5V, Rc = 100ohmss Fall Time µ 5 Ic= 2mA, Vce = 5V, Rc = 100 ohmss COUPLED SPECIFICATIONS Isolation Voltage V 2500 T = 1 minute Isolation Resistance G 50Ω rev 1.0 Solid State Optronics, Inc. 1.888.377.4776 www.ssousa.com Outside Dimension:Unit (mm) TOLERANCE :+ 0.2mm
rev 1.0 Solid State Optronics, Inc. 1.888.377.4776 www.ssousa.com Fig.1 Current Transfer Ratio vs. Forward Current Forward Current IF (mA) Current transfer ratio CTR (%) Fig.2 Collector Power Dissipation vs. Ambient Temperature Ambient Temperature Ta (°C) Collector Power Dissipation Pc (mW) Fig.4 Forward Current vs. Ambient Temperature Ambient Temperature Ta (°C) Forward Current IF (mA) Fig.5 Forward Current vs. Forward Voltage Forward Voltage VF (V) Forward Current IF (mA) Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Ambient Temperature Ta (°C) Relative Current Transfer Ratio (%) Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature Ambient Temperature Ta (°C) Collector-emitter Saturation Voltage Vce (V) Fig.10 Response Time vs. Load Resistance Load Resistance RL(K ohm) Response Rise Time (us) Fig.3 Collector Dark Current vs. Ambient Temperature Ambient Temperature Ta (°C) Collector Dark Current Iceo (A) Fig.6 Collector Current vs. Collector- emitter Voltage Collector-emitter Voltage VCE (V) Collector Current Ic (mA) Fig.9 Collector-emitter Saturation Voltage vs. Forward Current Forward Current IF (mA) Collector-emitter Saturation Voltage Vce (V) Fig.11 Response Time vs. Load Resistance Load Resistance RL(K ohm) Response Rise Time (us) Test circuit for switching time.