SDT3A5N06-C SECOS | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
3.5A, 60V , R DS(O/glyph1197) 100 m ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 22-Jun-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R DSON and gate charge for most of the synchronous buck converter applications. The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING
PACKAGE INFORMATION
(TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TA=25°C 3.5 Continuous Drain Current @VGS =10V 1 TA=70°C ID 2.8 A Pulsed Drain Current 3 IDM 14 A Power Dissipation PD 2 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Rating t≦10sec , 62.5 Thermal Resistance from Junction to Ambient 1 Steady State , 100 Thermal Resistance from Junction to Ambient 2 RθJA 250 °C / W Package MPQ Leader Size DFN2×2-6J 3K 7 inch DFN2x2-6J 3A5N06 /box4/box4/box4/box4 . /box4/box4 /box4/box4 = Date code A 1. 924 2.076 H 0.20 - B 1.924 2.076 I 0.85 1.05 C 0.46 0.66 J 0.70 0.90 D 0.65 TYP. K 0.20 0.40 E 0.20 0.40 L 0.203REF F 0.80 1.00 M 0.00 0.05 G 0.174 0.326
3.5A, 60V , R DS(O/glyph1197) 100 m ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 22-Jun-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 - - V V GS =0, I D=250µA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS =VGS , I D=250µA Forward Transfer conductance gfs - 13 - S V DS =5V, ID=2A Gate-Source Leakage Current IGSS - - ±100 nA V DS =0,VGS = ±20V - - 1 V DS =48V, VGS =0,TJ=25°C Drain-Source Leakage Current IDSS - - 5 µA VDS =48V, VGS =0, T J=55°C - - 100 V GS =10V, I D=3A Drain-Source On-Resistance 4 R DS(ON) - - 110 mΩ VGS =4.5V, I D=2A Total Gate Charge Q g - 5 - Gate-Source Charge Q gs - 1.68 - Gate-Drain Charge Q gd - 1.9 - nC VDS =48V VGS =4.5V ID=2A Turn-On Delay Time T d(on) - 1.6 - Rise Time T r - 7.2 - Turn-Off Delay Time T d(off) - 25 - Fall Time T f - 14.4 - nS VDS=30V VGS =10V ID=2A RG=3.3Ω Input Capacitance C iss - 511 - Output Capacitance C oss - 38 - Reverse Transfer Capacitance Crss - 25 - pF VDS =15V VGS =0 f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - 3.5 A Pulsed Source Current 3 I SM - - 14 A Forward On Voltage 4 V SD - - 1.2 V I S=1A, VGS =0V Reverse Recovery Time t rr - 9.7 - nS Reverse Recovery Charge Q rr - 5.8 - nC IF=2A , dI/dt=100A/µs , TJ=25°C Notes: 1. Surface Mounted on 1” x 1” FR4 Board with 2OZ copper. 2. When mounted on minimum pad of 2 oz. copper. 3. Pulse width limited by maximum junction temperature. 4. Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%.
3.5A, 60V , R DS(O/glyph1197) 100 m ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 22-Jun-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVE
3.5A, 60V , R DS(O/glyph1197) 100 m ΩΩ ΩΩ /glyph1197-Channel Enhancement Mode Power MOSFET 22-Jun-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVE