SDT3585S

SDT3585S SECOS | Alldatasheet

Document overview

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• PDF pages: 7

Technical content

/glyph1197 & P-Ch Enhancement Mode MOSFET /glyph1197-Ch: 5A, 20V , R DS(O/glyph1197) 37 m ΩΩ ΩΩ P-Ch: -3.5A, -20V , R DS(O/glyph1197) 75 m ΩΩ ΩΩ 12-Sep-2017 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The SDT3585S is the highest performance trench N+P MOSFETs with extreme high cell density, which provide excellent R DSON and gate charge for most of the synchronous buck converter applications. The SDT3585S meet the RoHS and Green Product requirement with full function reliability approved.

APPLICATIONS

/circle6 Power Management In Note Book /circle6 Portable Equipment /circle6 DC/DC Converter /circle6 Load Switch MARKING

PACKAGE INFORMATION

(TA=25°C unless otherwise specified) Rating Parameter Symbol N-ch P-ch Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V TA=25°C 5 -3.5 A Continuous Drain Current 1 @V GS =4.5V TA=70°C ID 4 -2.8 A Pulsed Drain Current 3 IDM 17 -12 A Total Power Dissipation TA=25°C PD 1.5 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Data t 5sec ,83≦ °C / W Maximum Thermal Resistance from Junction to Ambient 1 Steady State , 125 °C / W Maximum Thermal Resistance from Junction to Ambient 2 RθJA 250 °C / W Maximum Thermal Resistance from Junction to Case 1 R θJC 8.4 °C / W Package MPQ Leader Size DFN2×2-6L-J 3K 7 inch DFN2x2-6L-J A 2.00 BSC. G

0.30 BSC

B 2.00 BSC. H 0.20 BSC - C 0.675 0.75 0.80 J 0 - 0.06 E F 0.65BSC P 0.52 0.65 0.72 3585S .

/glyph1197 & P-Ch Enhancement Mode MOSFET /glyph1197-Ch: 5A, 20V , R DS(O/glyph1197) 37 m ΩΩ ΩΩ P-Ch: -3.5A, -20V , R DS(O/glyph1197) 75 m ΩΩ ΩΩ 12-Sep-2017 Rev. A Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CH ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS 20 - - V V GS =0, I D =250µA Breakdown Voltage Temperature Coefficient BV△ DSS / Tj△ - 0.018 - V/°C Reference to 25°C, I D =1mA Gate-Threshold Voltage V GS(th) 0.5 - 1.2 V V DS =V GS , I D =250µA Forward Transfer conductance gFS - 20 - S V DS =5V, ID =4A Gate-Body Leakage Current I GSS - - ±100 nA V DS =0,V GS = ±12V - - 1 V DS =16V, V GS =0,T J=25°C Zero Gate Voltage Drain Current IDSS - - 5 µA VDS =16V, V GS =0,TJ=55°C - - 37 V GS =4.5V, I D =4A Drain-Source On-Resistance 4 R DS(ON) - - 45 mΩ VGS =2.5V, I D =3A Total Gate Charge Q g - 8.6 - Gate-Source Charge Q gs - 1.37 - Gate-Drain Charge Q gd - 2.3 - nC VDS =15V VGS =4.5V ID =4A Turn-On Delay Time T d(ON) - 5.2 - Rise Time T r - 34 - Turn-Off Delay Time T d(OFF) - 23 - Fall Time T f - 9.2 - nS VDS =10V VGS =4.5V ID =4A RG=3.3Ω RD =2.5Ω Input Capacitance C iss - 635 - Output Capacitance C oss - 70 - Reverse Transfer Capacitance Crss - 63 - pF VDS =15V VGS =0 f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - 5 A Pulsed Source Current 3 I SM - - 17 A Forward On Voltage 4 V SD - 0.7 1.2 V I S=1A, V GS =0V Reverse Recovery Time T rr - 7.5 - ns Reverse Recovery Charge Q rr - 2.1 - nC IS=4A,VGS =0V,dI/dt=100A/µs Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. Surface mounted on FR4 Board using the minimum recommended pad size 3. Pulse width limited by maximum junction temperature 4. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%

/glyph1197 & P-Ch Enhancement Mode MOSFET /glyph1197-Ch: 5A, 20V , R DS(O/glyph1197) 37 m ΩΩ ΩΩ P-Ch: -3.5A, -20V , R DS(O/glyph1197) 75 m ΩΩ ΩΩ 12-Sep-2017 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CH ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BV DSS -20 - - V V GS =0, I D = -250µA Breakdown Voltage Temperature Coefficient BV△ DSS / Tj△ - -0.01 - V/°C Reference to 25°C,I D = -1mA Gate-Threshold Voltage V GS(th) -0.5 - -1.2 V V DS =V GS , I D = -250µA Forward Transfer conductance gFS - 9 - S V DS = -5V, ID = -3A Gate-Body Leakage Current I GSS - - ±100 nA V DS =0,V GS = ±12V - - -1 V DS = -16V, V GS =0,T J=25°C Zero Gate Voltage Drain Current IDSS - - -5 µA VDS = -16V, V GS =0,T J=55°C Drain-Source On-Resistance 4 R DS(ON) - - 105 mΩ VGS = -2.5V, I D = -2A Total Gate Charge Q g - 9.7 - Gate-Source Charge Q gs - 2.05 - Gate-Drain Charge Q gd - 2.43 - nC VDS = -15V VGS = -4.5V ID = -3A Turn-On Delay Time T d(ON) - 4.8 - Rise Time T r - 9.6 - Turn-Off Delay Time T d(OFF) - 52 - Fall Time T f - 8.4 - nS VDS = -10V VGS = -4.5V ID = -3A RG=3.3Ω RD =3.33Ω Input Capacitance C iss - 686 - Output Capacitance C oss - 90.8 - Reverse Transfer Capacitance Crss - 80.4 - pF VDS = -15V VGS =0 f=1MHz Source-Drain Diode Continuous Source Current 1 I S -3.5 A Pulsed Source Current 3 I SM -12 A Forward On Voltage 4 V SD -0.7 -1.2 V I S= -1A, V GS =0V Reverse Recovery Time T rr - 8.4 - ns Reverse Recovery Charge Q rr - 3.3 - nC IS= -3A,VGS =0V, dI/dt=100A/µs Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. Surface mounted on FR4 Board using the minimum recommended pad size 3. Pulse width limited by maximum junction temperature 4. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%

/glyph1197 & P-Ch Enhancement Mode MOSFET /glyph1197-Ch: 5A, 20V , R DS(O/glyph1197) 37 m ΩΩ ΩΩ P-Ch: -3.5A, -20V , R DS(O/glyph1197) 75 m ΩΩ ΩΩ 12-Sep-2017 Rev. A Page 4 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CH CHARACTERISTIC CURVE

/glyph1197 & P-Ch Enhancement Mode MOSFET /glyph1197-Ch: 5A, 20V , R DS(O/glyph1197) 37 m ΩΩ ΩΩ P-Ch: -3.5A, -20V , R DS(O/glyph1197) 75 m ΩΩ ΩΩ 12-Sep-2017 Rev. A Page 5 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. N-CH CHARACTERISTIC CURVE

/glyph1197 & P-Ch Enhancement Mode MOSFET /glyph1197-Ch: 5A, 20V , R DS(O/glyph1197) 37 m ΩΩ ΩΩ P-Ch: -3.5A, -20V , R DS(O/glyph1197) 75 m ΩΩ ΩΩ 12-Sep-2017 Rev. A Page 6 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CH CHARACTERISTIC CURVE

/glyph1197 & P-Ch Enhancement Mode MOSFET /glyph1197-Ch: 5A, 20V , R DS(O/glyph1197) 37 m ΩΩ ΩΩ P-Ch: -3.5A, -20V , R DS(O/glyph1197) 75 m ΩΩ ΩΩ 12-Sep-2017 Rev. A Page 7 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. P-CH CHARACTERISTIC CURVE