SDT3005 SECOS | Alldatasheet
Document overview
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Technical content
5A, 30V , R DS(ON) 42 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 01-Jul-2016 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SDT3005 provides designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. DFN2*2-6J package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
/circle6 TrenchFET power MOSFET /circle6 Low R DS(on) /circle6 Typical ESD protection APPICTIONS /circle6 Load switch and battery protection MARKING
PACKAGE INFORMATION
DFN2*2-6J 3K 7 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 5 A Pulsed Drain Current 1 IDM 20 A Thermal Resistance from Junction to Ambient R θJA 250 ° C / W Operating Junction and Storage Temperature T J, T STG 150, -55~150 ° C DFN2*2-6J 3005 A 1.924 2.076 H 0.20 - B 1.924 2.076 I 0.85 1.05 C 0.46 0.66 J 0.70 0.90 D 0.65 TYP. K 0.20 0.40 E 0.20 0.40 L 0.203REF F 0.80 1.00 M 0.00 0.05 G 0.174 0.326
5A, 30V , R DS(ON) 42 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 01-Jul-2016 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250 µA Gate-Source Leakage Current I GSS - - ±10 µA V GS = ±10V, VDS =0 Drain-Source Leakage Current I DSS - - 1 µA V DS =30V, V GS =0 Gate-Threshold Voltage 2 V GS(th) 0.6 - 1 V V DS =V GS , I D =250 µA Forward Transconductance 2 g fs - 15 - S V DS =5V, ID =4A Diode Forward Voltage 2 V SD - - 1 V I S=1A, V GS =0 - - 42 V DS =10V, I D =5A - - 44 V DS =4.5V, I D =5A Static Drain-Source On-Resistance 2 R DS(ON) - - 50 m Ω VGS =2.5V, I D =4A Dynamic Characteristics Input Capacitance C iss - 245 - Output Capacitance C oss - 35 - Reverse Transfer Capacitance C rss - 20 - pF VDS =15V VGS =0V f=1MHz Switching Characteristics Total Gate Charge Q g - 10 - Gate-Source Charge Q gs - 0.5 - Gate-Drain Charge Q gd - 1 - nC ID =4A VDS =15V VGS =10V Turn-On Delay Time T d(on) - 2 - Rise Time T r - 3.5 - Turn-Off Delay Time T d(off) - 22 - Fall Time T f - 3.5 - nS VDD =15V VGS =10V R L= 3.75 Ω R GEN =3Ω Notes: 1. Repetitive rating ：Pulse width limited by junction temperature. 2. Pulse Test: Pulse With ≦300µs, duty cycle ≦2%.
5A, 30V , R DS(ON) 42 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 01-Jul-2016 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES