STD200 SIRECTIFIER | Alldatasheet

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Technical content

Thyristor-Diode Modules, Diode-Thyristor Modules Type STD/SDT200GK08 STD/SDT200GK12 STD/SDT200GK14 STD/SDT200GK16 STD/SDT200GK18 VRRM VDRM V 800 1200 1400 1600 1800 VRSM VDSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit TVJ=TVJM TC=85oC; 180o sine 314 200 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 8000 8500 7000 7600 AITSM, IFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 38000 34000 30000 27000 A2s i2dt (di/dt)cr 250

800 A/us

(dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us 120 60 W PGAV 20 W ITRMS, IFRMS ITAVM, IFAVM oC TVJ TVJM Tstg -40...+130 125 -40...+130 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M8) 2.5-5/22-44 12-15/106-132 Nm/lb.in. Weight 320 g TVJ=TVJM repetitive, IT=750A f=50Hz, tp=200us VD=2/3VDRM IG=1A non repetitive, IT=200A diG/dt=1A/us VRGM 10 V Typical including screws

Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values Unit IRRM TVJ=TVJM; VR=VRRM; VD=VDRM 70 mA

FEATURES

  • International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

  • Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches mAIDRM 40 VVT, VF IT, IF=600A; TVJ=25oC 1.50 VTO For power-loss calculations only (TVJ=140oC) 0.95 V rT 1.0 m VD=6V; TVJ=25oC TVJ=-40oCVGT 3 V VD=6V; TVJ=25oC TVJ=-40oCIGT 150 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.25 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 150 mA TVJ=25oC; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us 300 mAIL per thyristor/diode; DC current per moduleRthJC 0.140

0.070 K/W

per thyristor/diode; DC current per moduleRthJK 0.180

0.090 K/W

dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 TVJ=25oC; VD=1/2VDRM IG=1A; diG/dt=1A/ustgd 2 us TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=50V/us; VD=2/3VDRMtq 200 us uCQS TVJ=125oC; IT, IF=400A; -di/dt=50A/us 760 IRM 275 A

Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 Gate trigger characteristics Fig. 6 Gate trigger delay time Fig. 2 i2t versus time (1-10 ms) 3 x STD/SDT200

Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 t s ZthJK K/W t s ZthJC K/W 30° DC 30° DC Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJC for various conduction angles d: dR thJC (K/W) DC 0.129 180oC 0.131 120oC 0.131 60oC 0.132 30oC 0.132 Constants for ZthJC calculation: iR thi (K/W) ti (s) 1 0.0035 0.099 2 0.0165 0.168 3 0.1091 0.456 RthJK for various conduction angles d: dR thJK (K/W) DC 0.169 180oC 0.171 120oC 0.172 60oC 0.172 30oC 0.173 Constants for ZthJK calculation: iR thi (K/W) ti (s) 1 0.0033 0.099 2 0.0159 0.168 3 0.1053 0.456 4 0.04 1.36 3 x STD/SDT200