SDT05S60_08 INFINEON | Alldatasheet

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Technical content

2008-06-02Rev. 2.2 Page 1 SDT05S60 SDT05S60 thinQ!¥ SiC Schottky DiodeSilicon Carbide Schottky Diode

  • Worlds first 600V Schottky diode
  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery
  • No temperature influence on the switching behavior
  • No forward recovery Product Summary VRRM 600 V Qc 14 nC IF 5 A PG-TO220-2-2. Pin 1 Pin 2 C A Type Package Ordering Code SDT05S60 PG-TO220-2-2. Q67040S4644 Marking D05S60 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous forward current, TC=100°C IF 5 A RMS forward current, f=50Hz IFRMS 7.1 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 18.5 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 21 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 50 i 2t value, TC=25°C, tp=10ms ³i2dt 1.7 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 43 W Operating and storage temperature Tj , Tstg -55... +175 °C

2008-06-02Rev. 2.2 Page 2 SDT05S60 SDT05S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.5 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=5A, Tj=25°C IF=5A, Tj=150°C VF 1.5 1.7 1.7 2.1 V Reverse current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 200 1000 µA

2008-06-02Rev. 2.2 Page 3 SDT05S60 SDT05S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Total capacitive charge VR=400V, IF=5A, diF/dt=200A/µs, Tj=150°C Qc - 14 - nC Switching time VR=400V, IF=5A, diF/dt=200A/µs, Tj=150°C trr - n.a - ns Total capacitance VR=1V, TC=25°C, f=1MHz VR=300V, TC=25°C, f=1MHz VR=600V, TC=25°C, f=1MHz C 170 pF

2008-06-02Rev. 2.2 Page 4 SDT05S60 SDT05S60

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC W SDT05S60 Ptot

2 Diode forward current

IF= f (TC) parameter: Tj≤175 °C 0 20 40 60 80 100 120 140 °C 180 TC 0.5 1.5 2.5 3.5 4.5 A IF 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 0 1 2 3 4 5 6 7 8 A 10 IF(AV) W PF(AV) d=1 d=0.5 d=0.2 d=0.1 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs VF A IF 150°C 125°C 100°C 25°C -40°C

2008-06-02Rev. 2.2 Page 5 SDT05S60 SDT05S60 5 Typ. reverse current vs. reverse voltage IR=f(VR) 100 150 200 250 300 350 400 450 500 V 600 VR -310 -210 -110 010 110 210 µA IR 150°C 125°C 100°C 25°C

6 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -410 -310 -210 -110 010 110 K/W SDT05S60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 7 Typ. capacitance vs. reverse voltage C= f(VR) parameter: TC = 25 °C, f = 1 MHz 10 0 10 1 10 2 10 3 V VR 100 125 150 pF 200 C 8 Typ. C stored energy EC=f(VR) 0 100 200 300 400 V 600 VR 0.5 1.5 µJ EC

2008-06-02Rev. 2.2 Page 6 SDT05S60 SDT05S60 9 Typ. capacitive charge vs. current slope Qc=f(diF/dt) parameter: Tj = 150 °C 0 100 200 300 400 500 600 700 800A/µs 1000 diF/dt nC Qc IF*0.5 IF IF*2

2008-06-02Rev. 2.2 Page 7 SDT05S60 SDT05S60 PG-TO-220-2-2

2008-06-02Rev. 2.2 Page 8 SDT05S60 SDT05S60