SDT02S60 INFINEON | Alldatasheet

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Technical content

2004-03-22Rev. 2.0 Page 1 SDT02S60SDT02S60 thinQ! SiC Schottky DiodeSilicon Carbide Schottky Diode

  • Worlds first 600V Schottky diode
  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery
  • No temperature influence on the switching behavior
  • No forward recovery Product Summary VRRM 600 V Qc 4.6 nC IF 2 A P-TO220-2-2. Pin 1 Pin 2 C A Type Package Ordering Code SDT02S60 P-TO220-2-2. Q67040-S4511 Marking D02S60 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous forward current, TC=100°C IF 2 A RMS forward current, f=50Hz IFRMS 2.8 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 4.1 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 7.3 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 17 i 2t value, TC=25°C, tp=10ms ∫i2dt 0.08 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 15 W Operating and storage temperature Tj , Tstg -55... +175 °C

2004-03-22Rev. 2.0 Page 2 SDT02S60SDT02S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 10 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=2A, Tj=25°C IF=2A, Tj=150°C VF 1.75 2.2 2.6 V Reverse current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 100 500 µA

2004-03-22Rev. 2.0 Page 3 SDT02S60SDT02S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Total capacitive charge VR=400V, IF=2A, diF/dt=200A/µs, Tj=150°C Qc - 4.6 - nC Switching time VR=400V, IF=2A, diF/dt=200A/µs, Tj=150°C trr - n.a. - ns Total capacitance VR=1V, TC=25°C, f=1MHz VR=300V, TC=25°C, f=1MHz VR=600V, TC=25°C, f=1MHz C 5.2 5.0 pF

2004-03-22Rev. 2.0 Page 4 SDT02S60SDT02S60

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 °C 180 TC W Ptot

2 Diode forward current

IF= f (TC) parameter: Tj≤175 °C 0 20 40 60 80 100 120 140 °C 180 TC 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 A 2.2 IF 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 0 0.5 1 1.5 2 A 3 IF(AV) W PF(AV) d=0.1 d=0.2 d=0.5 d=1 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 0 0.5 1 1.5 2 2.5 3 V 4 VF 0.5 1.5 2.5 A IF 150°C 100°C 25°C

2004-03-22Rev. 2.0 Page 5 SDT02S60SDT02S60 5 Typ. reverse current vs. reverse voltage IR=f(VR) 50 150 250 350 450 V 600 VR -3 10 -2 10 -1 10 0 10 1 10 2 10 µA IR 150°C 125°C 100°C 25°C

6 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W SDT02S60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 7 Typ. capacitance vs. reverse voltage C= f(VR) parameter: TC = 25 °C, f = 1 MHz 10 1 10 2 10 3 V VR pF C 8 Typ. C stored energy EC=f(VR) 0 100 200 300 400 V 600 VR 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 µJ 1.2 EC

2004-03-22Rev. 2.0 Page 6 SDT02S60SDT02S60 9 Typ. capacitive charge vs. current slope Qc=f(diF/dt) parameter: Tj = 150 °C 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt nC Qc IF*2 IF*0.5 IF

2004-03-22Rev. 2.0 Page 7 SDT02S60SDT02S60 TO-220-2-2 symbol [mm] [inch] min max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L M N P 1.10 1.40 0.0433 0.0551 T U V W X 0.00 0.40 0.0000 0.0157 0.26 typ.6.6 typ. 0.51 typ.13.0 typ. 7.5 typ. 0.295 typ. 2.4 typ. 0.095 typ. 4.4 typ. 0.173 typ. 2.54 typ. 0.1 typ. dimensions 0.41 typ.1.05 typ. A U V W G M T J F L X P D C K N BH E

2004-03-22Rev. 2.0 Page 8 SDT02S60SDT02S60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.