SDR958_1 SSDI | Alldatasheet

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Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0113C DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ └ Screening 2/ ___ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Options __= Straight Leads DB = Bent Down UB = Bent Up └ Package N = TO-258 P = TO-259 S2 = SMD2 └ Family/Voltage 958 = 800V 959 = 900V 9510 = 1000V 9511 = 1100V 9512 = 1200V SDR958 thru SDR9512 Series

50 AMP

Features:

  • Ultra Fast Recovery: 80 nsec typical
  • High Surge Rating
  • Low Reverse Leakage Current
  • Low Junction Capacitance
  • Hermetically Sealed Package
  • Faster Recovery Times Available – Contact Factory
  • TX, TXV, Space Level Screening Available - Consult Factory Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR958 SDR959 SDR9510 SDR9511 SDR9512 VRRM VRWM VR 800 900 1000 1100 1200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/ Io 50 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) 3/ IFSM 500 Amps Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case3/ N&P SMD2 RθJC 0.45 0.3 ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability - Contact Factory 2/ Screening per MIL-PRF-19500 3/ Pins 2&3 connected TO-258 TO-259 SMD2

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0113C DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR958 thru SDR9512 Series Electrical Characteristics3/ Symbol Typ Max Units Instantaneous Forward Voltage Drop (TA = 25ºC, 300 μsec pulse) IF = 20Adc IF = 50Adc IF = 100Adc VF1 1.10 1.25 1.40 1.7 2.0 Volts Instantaneous Forward Voltage Drop TA = -55ºC TA = -55ºC TA = 100ºC TA = 100ºC IF = 20Adc IF = 50Adc IF = 20Adc IF = 50Adc VF2 1.20 1.30 0.95 1.15 1.80 1.60 Volts Reverse Leakage Current (Rated VR, TA = 25ºC, 300 μsec pulse minimum) IR1 50 100 μA Reverse Leakage Current (Rated VR, TA = 100ºC, 300 μsec pulse minimum) (Rated VR, TA = 125ºC, 300 μsec pulse minimum) (Rated VR, TA = 150ºC, 300 μsec pulse minimum) IR2 3.0 7.0 17.0 mA Junction Capacitance (VR = 5 Vdc, TA = 25ºC, f = 1MHz) (VR = 10 Vdc, TA = 25ºC, f = 1MHz) CJ 180 160 250 pF Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 100A/us) (IF = 10 A, dIF /dt = 45A/us) (IF = 10 A, dIF /dt = 45A/us) (IF = 10 A, dIF /dt = 45A/us) (IF = 10 A, dIF /dt = 45A/us) TA = 25ºC TA = 25ºC TA = 25ºC TA = 25ºC TA = 25ºC TA = 100ºC TA = 100ºC trr1 trr2 IRM2 trr3 IRM3 trr4 IRM4 100 135 8.0 210 4.0 330 7.5 150 nsec nsec A nsec A nsec A Case Outline: TO-258 (N) Case Outline: TO-259 (P) Lead Forming Options: Suffix DB Suffix UB Pin1: Cathode Pin2: Anode Pin3: Anode .270 .240 .045 .035 .145 .135 .750 .500 2x Ø.150 .120 .290 .275 2x .265 .245 .135 .120 TYP .550 .530 2x .265 .245 3x Ø.065 .055 2x .205 .195 .405 .395 1.215 1.175 .960 .935 .700 .680 1.300 1.030 PIN 1 PIN 2 PIN 3 PIN 1 PIN 2 PIN 3 2x .270 .240 .190 MIN .190 MIN 2x .270 .240

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0113C DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR958 thru SDR9512 Series Case Outline: SMD2(S2)