SDR950M SSDI | Alldatasheet

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Technical content

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Leg Bend Option (See Figure 1) Package M = TO-254, Z = TO -254Z SDR950M & Z Thru SDR952M & Z 50A, 35nsec typ., 100-200 V Hyper Fast Rectifier Features:

  • Hyper Fast Recovery: 50nsec Maximum 3/
  • High Surge Rating
  • Low Reverse Leakage Current
  • Low Junction Capacitance
  • Hermetically Sealed Package
  • Gold Eutectic Die Attach
  • Ultrasonic Aluminum Wire Bonds
  • Higher Voltages and Faster Recovery Times Available, Contact Factory
  • Ceramic Seal for Improved Hermeticity Available
  • TX, TXV, and S -Level Screening Available 2/ Maximum Ratings Symbol Value Units Peak Repetitive Reverse Voltage SDR950M & Z SDR951M & Z SDR952M & Z VRRM VRWM VR 100 150 200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 5/ Io 50 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, or equivalent DC) 4/ IFSM 350 Amps Operating & Storage Temperature TOP & TSTG -65 to +200 ºC Maximum Total Thermal Resistance Junction to Case 4/ Rq JC 0.85 ºC/W - Notes: 1/ For ordering information, Price, Operating Curves, and Availability - Contact Fact ory. 2/ Screened to MIL -PRF-19500. 3/ Recovery Conditions: I F =10 Amp, di/dt = 200A/µs 4/ Pins 2 and 3 Tied Together. 5/ TC = 150°C, Derate to 0A @ 200 °C. - TO-254 (M) - TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0039K DOC

Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR950M & Z Thru SDR952M & Z Electrical Characteristics Symbol Max Units Instantaneous Forward Voltage Drop (IF = 25A, 300 -500µsec Pulse) (IF = 50A, 300 -500µsec Pulse) TA = 25 ºC TA = 25 ºC VF1 VF2 1.00

1.25 VDC

Instantaneous Forward Voltage Drop (IF = 50Adc, 300 -500µsec Pulse ) TA = -55 ºC VF3 1.35 VDC Reverse Leakage Curr ent (300µsec Pulse Minimum) TA = 25 ºC, Rated VR TC = 100 ºC, 80% of Rated V R IR1 IR2 100 mA mA Reverse Recovery Time (IF =10 Amp, di/dt = 200A/µs ) tRR 50 nsec Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) CJ 900 pF Figure 1- Optional Lead Bends Suffix MD & ZD Suffix MU & ZU PIN ASSIGNMENT Code FUNCTION Pin 1 Pin 2 Pin 3 Cathode Anode Anode TO-254 (Suffix M) Outline: TO-254Z (Suffix Z) Ou tline: Measured in Inches NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0039K DOC