SDR803_1 SSDI | Alldatasheet

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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SDR __ __ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Pin Configuration __ = Normal (Cathode to Stud) (See Table 1) R = Reverse (Anode to Stud) Family/Voltage 803 = 50V 804 = 100V 805 = 150V 806 = 200V 807 = 250V 808 = 300V 809 = 350V 810 = 400V 811 = 500V 812 = 600V 813 = 700V 814 = 800V 815 = 900V 816 = 1000V 817 = 1100V SDR803 Thru SDR817 100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier Features:

  • Fast Recovery: 60nsec Maximum
  • Low Forward Voltage Drop
  • Low Reverse Leakage Current
  • Single Chip Construction
  • PIV to 1100 Volts
  • Hermetically Sealed
  • For High Efficiency Applications
  • TX, TXV, and S-Level Screening Available 2/ Maximum Ratings 4/ Symbol Value Units Peak Repetitive Reverse Voltage and DC Blocking Voltage @ 100µA SDR803 SDR804 SDR805 SDR806 SDR807 SDR808 SDR809 SDR810 SDR811 SDR812 SDR813 SDR814 SDR815 SDR816 SDR817 VRRM VRWM VR 100 150 200 250 300 350 400 500 600 700 800 900 1000 1100 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Io 100 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) SDR803 – 806 SDR807 – 809 SDR810 – 814 SDR815 – 817 IFSM 1000 800 700 600 Amps Operating & Storage Temperature T OP & TSTG -55 to +175 ºC Thermal Resistance (Junction to Case) RθJC 0.85 ºC/W Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF = 500 mA, IR = 1 Amp, IRR = 250 mA. 4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0059G DOC

Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR803 Thru SDR817 Electrical Characteristics 4/ Symbol Value Units Maximum Instantaneous Forward Voltage Drop (IF =100Adc, TA = 25 ºC, 300-500μs Pulse) SDR803 – 806 SDR807 – 810 SDR811 – 814 SDR815 – 817 V 1.00 1.50 1.85 1.90 V DC Maximum Instantaneous Forward Voltage Drop (IF =100Adc, TA = -55 ºC, 300-500μs Pulse) SDR803 – 806 SDR807 – 810 SDR811 – 814 SDR815 – 817 VF2 1.10 1.60 1.95 2.00 VDC Maximum Reverse Leakage Current (Rated VR, 300μs minimum pulse) TA = 25 ºC TA = 100 ºC IR1 IR2 100 μA mA Maximum Reverse Recovery Time (IF = 500 mA, IR = 1 Amp, IRR = 250 mA) TA = 25 ºC tRR 60 nsec Maximum Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) CJ 700 pF Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF = 500 mA, IR = 1 Amp, IRR = 250 mA. 4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C. Table 1- PIN ASSIGNMENT Code Configuration Terminal Stud __ Normal Anode Cathode R Reverse Cathode Anode DO-5 Outline (Normal Pin Configuration Shown): NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0059G DOC