SDR4G_1 SSDI | Alldatasheet

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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ L Screening2/ = None TX = TX Level TXV = TXV Level S = S Level L Package ___ = Axial SMS = Surface Mount Square Tab L Voltage G = 400 V J = 600 V K = 800 V M = 1000 V N = 1200 V SDR4G - SDR4N and SDR4GSMS – SDR4NSMS

3 AMP

400 – 1200 Volts 50-80 nsec ULTRA FAST RECTIFIER Features:

  • Ultra Fast Recovery: 50-80 nsec Max. @ 25°C 85-125 nsec Max. @ 100°C
  • Single Chip Construction
  • PIV to 1200 Volts
  • Low Reverse Leakage Current
  • Hermetically Sealed
  • For High Efficiency Applications
  • Available in Axial Leaded & Surface Mount versions
  • Metallurgically Bonded
  • TX, TXV, and S-Level Screening Available2/ Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR4G SDR4J SDR4K SDR4M SDR4N VRRM VRWM VR 400 600 800 1000 1200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Io 3 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, T A = 25ºC) IFSM 75 Amps Operating & Storage Temperature Top & Tstg -65 to +175 ºC Maximum Thermal Resistance Junction to Lead, L = 3/8 " Junction to End Tab RθJL RθJE 14 ºC/W Notes: / For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. / Screening Based on MIL-PRF-19500. Screening Flows Available on Request. Axial Leaded SMS (Square) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0015B DOC

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR4G - SDR4N and SDR4GSMS – SDR4NSMS Electrical Characteristics Part Type Symbol Max Units Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = 25ºC, 300 µs pulse) SDR2G – J SDR2K – N VF 1.9

2.1 Vdc

Instantaneous Forward Voltage Drop (IF = 3 Adc, TA = -55ºC, 300 µs pulse) SDR2G – J SDR2K – N VF 2.1

2.3 Vdc

(Rated VR, TA = 25ºC, 300 µs pulse minimum) IR 5 μA Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µs pulse minimum) IR 0.5 μA Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) CJ 40 pF Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A, TA = 25ºC) SDR2G – J SRS1K SRS1M SRS1N trr nsec Case Outline: (Axial) B ØC ØADD DIMENSIONS DIM MIN MAX A .120” .180” B .130” .230” C .047” .053” D 1.00” --- Case Outline: Surface Mount (SMS) C B A A D Dimensions prior to solder dipping DIMENSIONS DIM MIN MAX A 0.172” 0.180” B 0.180” 0.280” C 0.022” 0.028” D 0.002” –– NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0015B DOC