SDR6638 SSOUSA | Alldatasheet

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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0126B DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level (for SM, use –S) └ Package Type __ = Axial Leaded SM = Surface Mount Round Tab (MELF) SMS = Surface Mount Square Tab Device Type ( VRWM ) 6638 = 125 V 6642 = 75 V 6643 = 50 V 4150 = 75 V SDR6638, SDR6642, SDR6643, & SDR4150 SERIES 300 mA 50 - 125 VOLTS 4.5 - 6.0 nsec HYPER FAST RECOVERY RECTIFIER FEATURES:

  • Hyper Fast Reverse Recovery Time 4.5 - 6 ns Max
  • Hermetically Sealed
  • Planar Passivated Chip
  • For High Efficiency Applications
  • Available in Axial, Subminiature Round Tab & Subminiature Square Tab Versions
  • TX, TXV, and S-Level Screening Available2/
  • Replacement for 1N6638, 1N6642, 1N6643, & 1N4150-1
  • Metallurgical Class 3 Bond MAXIMUM RATINGS 3/ RATING SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage DC Blocking Voltage SDR6638 SDR6642 SDR6643 SDR4150 VRWM VR 125 Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TC = 25°C) IO 300 mAmps Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TC = 25°C) IFSM 2.5 Amps Operating & Storage Temperature T OP and TSTG -65 to +175 °C Thermal Resistance SM and SMS- Junction to End Tab Axial- Junction to Lead @ .375” RθJE RθJL 100 325 °C/W NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. Axial Leaded SM SMS

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0126B DOC ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS SYMBOL LIMIT UNIT Maximum Instantaneous Forward Voltage Drop (Pulsed, TA = 25°C) @ IF = 10mA SDR6638 SDR6642 SDR6643 SDR4150 V 0.8 0.8 1.0 0.74 Vdc SDR6638 @ IF = 200mA SDR6642 @ IF = 100mA SDR6643 @ IF = 100mA SDR4150 @ IF = 100mA VF2 1.1 1.2 1.2 0.92 Vdc Maximum Instantaneous Forward Voltage Drop (Pulsed) I F = 100mA, TA = -55°C VF3 1.3 Vdc Minimum Breakdown Voltage Ir = 100 μA SDR6638 SDR6642 SDR6643 SDR4150 B VR 125 100 Vdc Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 25°C) SDR6638 @ VR = 20V SDR6642 @ VR = 20V SDR6643 @ VR = 20V SDR4150 @ VR = 50V IR1 100 nA Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 25°C) SDR6638 @ VR = 100V SDR6642 @ VR = 75V SDR6643 @ VR = 50V IR2 500 500 500 nA Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 150°C) SDR6638 @ VR = 20V SDR6642 @ VR = 20V SDR6643 @ VR = 20V SDR4150 @ VR = 50V IR3 100 μA Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 150°C) SDR6638 @ VR = 100V SDR6642 @ VR = 75V SDR6643 @ VR = 50V IR4 100 100 160 μA Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 0V SDR6638 SDR6642 SDR6643 SDR4150 C 2.5 5.0 5.0 2.5 pf Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 1.5V SDR6638 SDR6642 SDR6643 CJ2 2.0 2.8 2.8 pf Maximum Reverse Recovery Time (IF = IR = 10 mA, IRR = 1 mA) SDR6638 SDR6642 SDR6643 SDR4150 t rr 4.5 5.0 6.0 4.0 nsec AXIAL DIMENSIONS DIM MIN MAX A .056” .080” B .130” .180” C 1.00” 1.50” D .018” .022” SM DIMENSIONS DIM MIN MAX A .056” .064” B .130” .146” C .010” .022” SMS DIMENSIONS DIM MIN MAX A .070” .085” B .180” .210” C .022” .028” D .001” --- Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR6638, SDR6642, SDR6643, & SDR4150 SERIES