SDR2060UFBT SSDI | Alldatasheet

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Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0146A DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ └ Screening2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level └ Package Type BT = Button └ Reverse Recovery UF = Ultra Fast └ Voltage 60 = 600 V SDR2060UFBT

20 AMP

600 Volt

Features:

  • Replaces DO-4 and DO-5
  • Ultra Fast Recovery
  • Low Reverse Leakage Current
  • Hermetically Sealed Void-Free Construction 3/
  • Monolithic Single Chip Construction
  • High Surge Rating
  • Low Thermal Resistance
  • Higher Voltages Available - Contact Factory
  • Replacement for MSARS20E060G
  • TX, TXV, and Space Level Screening Available MAXIMUM RATINGS Symbol Value Units Peak Repetitive Reverse Voltage and DC Blocking Voltage V RRM VRWM VR

600 Volts

Average Rectified Forward Current (Resistive Load, 60Hz Sine Wave, BT Tc ≤100°C ) IO 20 Amps Peak Surge Current (8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA=25 o IFSM 100 Amps Operating and Storage Temperature T op & Tstg -65 to +175 oC Maximum Thermal Resistance Junction to Case RθJC 2.0 oC/W Notes: 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ PIND testing not required on void free devices per MIL-PRF-19500. Button (BT)

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0146A DOC ELECTRICAL CHARACTERISTICS (Ta = 25 oC unless specified) Symbol Max Unit Instantaneous Forward Voltage Drop IF = 5A pulsed VF1 1.25 V Instantaneous Forward Voltage Drop IF = 10A pulsed VF2 1.40 V Instantaneous Forward Voltage Drop IF = 20A pulsed VF3 1.65 V Instantaneous Forward Voltage Drop IF = 20A pulsed TA = -55oC VF4 2.05 V Instantaneous Forward Voltage Drop IF = 20A pulsed TA = 125oC VF5 1.70 V Instantaneous Forward Voltage Drop IF = 10A pulsed TA = -55oC VF4 1.45 V Reverse Leakage Current Rated VR, pulsed IR1 5 μA Reverse Leakage Current Rated VR, pulsed, TA = 125oC) IR2 200 μA Breakdown Volatge IR, = 100 μA BVR 600 V (min) Junction Capacitance (VR =10 VDC, f = 1MHz, TA = 25oC) CJ 80 pF Reverse Recovery Time (IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25oC) trr 55 nsec CASE OUTLINES: Button (BT) A1 OPTIONAL TAB PROFILEA T C 2x R ØP1 ØB Dim Min Max A 0.125 0.150 A1 — 0.020 ∅B — 0.190 C 0.190 0.210 C1 0.280 REF P1 0.145 0.155 P2 0.055 0.075 P4 0.060 REF T 0.008 0.012 R 0.015 REF Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR2060UFBT