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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0146D DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ └ Screening2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level Package Type = Axial BT = Cathode Button BTR = Anode Button Reverse Recovery UF = Ultra Fast Voltage 30 = 300 V 40 = 400 V 50 = 500 V 60 = 600 V SDR2030UF thru SDR2060UF Series

20 AMP

Features:  Replaces DO-4 and DO-5  Ultra Fast Recovery  Low Reverse Leakage Current  Hermetically Sealed Void-Free Construction 3/  Monolithic Single Chip Construction  High Surge Rating  Low Thermal Resistance  Higher Voltages Available - Contact Factory  Replacement for MSARS20E060G  TX, TXV, and Space Level Screening Available MAXIMUM RATINGS Symbol Value Units Peak Repetitive Reverse Voltage and DC Blocking Voltage SDR2030UFBT SDR2040UFBT SDR2050UFBT SDR2060UFBT V RRM VRWM VR 300 400 500 600 Volts Average Rectified Forward Current (Resistive Load, 60Hz Sine Wave) Button @Tc ≤ 100°C Axial @TL ≤ 55°C IO 20

10 Amps

(8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA=25 o IFSM 300 Amps Operating and Storage Temperature T op & Tstg -65 to +175 oC Maximum Thermal Resistance BT Button BTR Button Axial @ 0.25” RJC RJC RJL 2.0 2.2 6.0 oC/W Notes: 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ PIND testing not required on void free devices per MIL-PRF-19500. Axial Button

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0146D DOC ELECTRICAL CHARACTERISTICS (Ta = 25 oC unless specified) Symbol Max Unit Instantaneous Forward Voltage Drop IF = 5A pulsed VF1 1.25 V Instantaneous Forward Voltage Drop IF = 10A pulsed VF2 1.40 V Instantaneous Forward Voltage Drop IF = 20A pulsed VF3 1.65 V Instantaneous Forward Voltage Drop IF = 20A pulsed TA = -55oC VF4 2.05 V Instantaneous Forward Voltage Drop IF = 20A pulsed TA = 125oC VF5 1.70 V Instantaneous Forward Voltage Drop IF = 10A pulsed TA = -55oC VF4 1.45 V Reverse Leakage Current Rated VR, pulsed IR1 5 A Reverse Leakage Current Rated VR, pulsed, TA = 125oC) IR2 500 A Minimum Breakdown Voltage IR, = 100 A BVR Rated V (min) Junction Capacitance (VR =10 VDC, f = 1MHz, TA = 25oC) CJ 80 pF Reverse Recovery Time (IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25oC) trr 45 nsec CASE OUTLINES: Button Dim Min Max A 0.150” 0.165” A1 — 0.020” B 0.135” 0.165” C 0.190” 0.210” C1 0.280” REF P1 0.110” 0.130” P2 0.055” 0.075” P3 0.100” 0.120” P4 0.065” — T 0.008” 0.015” R 0.015” REF DIM MIN MAX A 0.135” 0.165” B 0.150” 0.180” C 0.057” 0.062” D .500” –– Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR2030UF thru SDR2060UF Series