SDP8436-003 HONEYWELL-ACC | Alldatasheet
Document overview
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Technical content
Features
Side-looking plastic package 50 ° (nominal) acceptance angle Wide sensitivity ranges Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes
Description
The SDP8406 is an NPN silicon phototransistor molded in a side-looking clear plastic package. The chip is positioned to accept radiation through a plastic lens from the side of the package. Product Specifications Product Type IR Component Angular Response (Degree) 50 Light Current Minimum 1.80 mA Light Current Maximum 3.60 mA Package Style Side-Looking Package Components Plastic Package Color Clear Rise and Fall Time 15 µs Power Dissipation 100 mW Operating Temperature Range -40 °C to 85 °C [-40 °F to 185 °F] Dark Current 100 nA Collector-Emitter Breakdown Voltage 30 V Emitter-Collector Breakdown Voltage 5 V Collector-Emitter Saturation Voltage 0.4 V Comment The radiation source is a tungsten lamp operating at a color temperature of 2870°K. Availability Global Product Name Phototransistor Due to regional agency approval requirements, some products may not be available in your area. Please contact your regional Honeywell office regarding your product of choice.