SDP20S30_10 INFINEON | Alldatasheet

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Technical content

2009-11-25Rev. 1.5 Page 1 SDP20S30 thinQ!¥ SiC Schottky DiodeSilicon Carbide Schottky Diode

  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery
  • No temperature influence on the switching behavior
  • No forward recovery 1 2 3 Product Summary VRRM 300 V Qc 23 nC IF 2x10 A P-TO220 Type Package Ordering Code SDP20S30 P-TO220-3 Q67040-S4419 Marking D20S30 Maximum Ratings, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Value Unit Continuous forward current, TC=100°C IF 10 A RMS forward current, f=50Hz IFRMS 14 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 36 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 45 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 100 i 2t value, TC=25°C, tp=10ms ³i2dt 6.5 A²s Repetitive peak reverse voltage VRRM 300 V Surge peak reverse voltage VRSM 300 Power dissipation, single diode mode, TC=25°C Ptot 65 W Operating and storage temperature Tj , Tstg -55... +175 °C

2009-11-25Rev. 1.5 Page 2 SDP20S30 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case (per leg) RthJC - - 2.3 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C VF 1.5 1.5 1.7 1.9 V Reverse current VR=300V, Tj=25°C VR=300V, Tj=150°C IR 200 1000 µA 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2009-11-25Rev. 1.5 Page 3 SDP20S30 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values Unit min. typ. max. AC Characteristics Total capacitive charge1) VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C Qc - 23 - nC Switching time2) VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C trr - n.a. - ns Total capacitance VR=0V, TC=25°C, f=1MHz VR=150V, TC=25°C, f=1MHz VR=300V, TC=25°C, f=1MHz C 600 pF

2009-11-25Rev. 1.5 Page 4 SDP20S30

1 Power dissipation (per leg)

Ptot = f (TC) 0 20 40 60 80 100 120 140 °C 180 TC W Ptot

2 Diode forward current (per leg)

IF= f (TC) parameter: Tj≤175 °C 0 20 40 60 80 100 120 140 °C 180 TC A IF 4 Typ. forward power dissipation vs. average forward current (per leg) PF(AV)=f(IF) TC=100°C, d = tp/T 0 2 4 6 8 10 12 14 A 18 IF(AV) W PF(AV) d=1 d=0.5 d=0.2 d=0.1 3 Typ. forward characteristic (per leg) IF = f (VF) parameter: Tj , tp = 350 µs VF A IF -40°C 25°C 100°C 125°C 150°C

2009-11-25Rev. 1.5 Page 5 SDP20S30 5 Typ. reverse current vs. reverse voltage (per leg)IR=f(VR) 50 100 150 200 V 300 VR -410 -310 -210 -110 010 110 210 µA IR 150°C 125°C 100°C 25°C

6 Transient thermal impedance (per leg)

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -410 -310 -210 -110 010 110 K/W SDP20S30 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 7 Typ. capacitance vs. reverse voltage (per leg)C= f(VR) parameter: TC = 25 °C, f = 1 MHz 10 0 10 1 10 2 10 3 V VR 100 150 200 250 300 350 pF 450 C 8 Typ. C stored energy (per leg) EC=f(VR) 0 50 100 150 200 V 300 VR 0.5 1.5 µJ 2.5 EC

2009-11-25Rev. 1.5 Page 6 SDP20S30 9 Typ. capacitive charge vs. current slope (per leg)Qc=f(diF/dt) parameter: Tj = 150 °C 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt nC Qc IF*0.5 IFIF*2

2009-11-25Rev. 1.5 Page 7 SDP20S30

2009-11-25Rev. 1.5 Page 8 SDP20S30