SDT10S30 INFINEON | Alldatasheet
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SDP10S30, SDB10S30 SDT10S30Preliminary data Silicon Carbide Schottky Diode /G01 Revolutionary semiconductor material - Silicon Carbide /G01 Switching behavior benchmark /G01 No reverse recovery /G01 No temperature influence on the switching behavior /G01 No forward recovery Product Summary VRRM 300 V Qc 23 nC IF 10 A P-TO220-2-2. P-TO220-3-1.P-TO220-3.SMD Pin 1 PIN 2 PIN 3 n.c. C A n.c. C A Marking D10S30 D10S30 D10S30 Type Package Ordering Code SDP10S30 P-TO220-3-1. Q67040-S4372 SDB10S30 P-TO220-3.SMD Q67040-S4373 SDT10S30 P-TO220-2-2. Q67040-S4447 C A Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous forward current, TC=100°C IF 10 A RMS forward current, f=50Hz IFRMS 14 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 36 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 45 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 100 i 2t value, TC=25°C, tp=10ms /G01 i2dt 6.5 A²s Repetitive peak reverse voltage VRRM 300 V Surge peak reverse voltage VRSM 300 Power dissipation, TC=25°C Ptot 65 W Operating and storage temperature Tj , Tstg -55... +175 °C
SDP10S30, SDB10S30 SDT10S30Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.3 K/W SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C VF 1.5 1.5 1.7 1.9 V Reverse current VR=300V, Tj=25°C VR=300V, Tj=150°C IR 200 1000 µA 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
SDP10S30, SDB10S30 SDT10S30Preliminary data Electrical Characteristics,at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Total capacitive charge1) VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C Qc - 23 - nC Switching time2) VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C trr - n.a. - ns Total capacitance VR=0V, TC=25°C, f=1MHz VR=150V, TC=25°C, f=1MHz VR=300V, TC=25°C, f=1MHz C 600 pF
SDP10S30, SDB10S30 SDT10S30Preliminary data
1 Power dissipation
Ptot = f (TC) 0 20 40 60 80 100 120 140 °C 180 TC W Ptot
2 Diode forward current
IF= f (TC) parameter: Tj/G03 175 °C 0 20 40 60 80 100 120 140 °C 180 TC A IF 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 0 2 4 6 8 10 12 14 A 18 IF(AV) W PF(AV) d=1 d=0.5 d=0.2 d=0.1 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs VF A IF -40°C 25°C 100°C 125°C 150°C
SDP10S30, SDB10S30 SDT10S30Preliminary data 5 Typ. reverse current vs. reverse voltage IR=f(VR) 50 100 150 200 V 300 VR -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 µA IR 150°C 125°C 100°C 25°C
6 Transient thermal impedance
ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SDP10S30 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 7 Typ. capacitance vs. reverse voltage C= f(VR) parameter: TC = 25 °C, f = 1 MHz 10 0 10 1 10 2 10 3 V VR 100 150 200 250 300 350 pF 450 C 8 Typ. C stored energy EC=f(VR) 0 50 100 150 200 V 300 VR 0.5 1.5 µJ 2.5 EC
SDP10S30, SDB10S30 SDT10S30Preliminary data 9 Typ. capacitive charge vs. current slope Qc=f(diF/dt) parameter: Tj = 150 °C 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt nC Qc IF*0.5 IFIF*2
SDP10S30, SDB10S30 SDT10S30Preliminary data P-TO220-3-1 symbol [mm] [inch] m i nm a xm i nm a x A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 2.54 typ. 0.1 typ. dimensions P-TO220-3-1 symbol [m m] [inch] m i nm a xm i nm a x A 9.80 10.00 0.3858 0.3937 B C 1.25 1.75 0.0492 0.0689 D 0.95 1.15 0.0374 0.0453 E F 0.72 0.85 0.0283 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 3.30 3.90 0.1299 0.1535 R S 1.70 2.50 0.0669 0.0984 T 0.50 0.65 0.0197 0.0256 U V W X Y Z 9.40 typ. 0.3701 typ. 16.15 typ. 0.6358 typ. 6.43 typ. 0.2532 typ. 4.60 typ. 0.1811 typ. 10.8 typ. 0.4252 typ. 1.35 typ. 0.0532 typ. 14.1 typ. 0.5551 typ. 8° max 8° max dimensions 2.54 typ. 0.1 typ. 5.08 typ. 0.2 typ. 1.3 typ. 0.0512 typ. TO-220-3-45 (P-TO220SMD)
SDP10S30, SDB10S30 SDT10S30Preliminary data MAX/MIN-dimensions are given in inches[mm]
SDP10S30, SDB10S30 SDT10S30Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.