SDP04S60_08 INFINEON | Alldatasheet

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Technical content

2008-06-02Rev. 2.5 Page 1 SDP04S60, SDD04S60 SDT04S60 thinQ!¥ SiC Schottky DiodeSilicon Carbide Schottky Diode

  • Worlds first 600V Schottky diode
  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery
  • No temperature influence on the switching behavior
  • Ideal diode for Power Factor Correction up to 800W1)
  • No forward recovery Product Summary VRRM 600 V Qc 13 nC IF 4 A PG-TO220-2-2. P-TO252 P-TO220 Pin 1 Pin 2 n.c. C Type Package Ordering Code SDP04S60 P-TO220-3 Q67040-S4369 SDD04S60 P-TO252-3 Q67040-S4368 SDT04S60 PG-TO220-2-2. Q67040-S4445 Pin 3 A Marking D04S60 D04S60 D04S60 n.c. A C C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous forward current, TC=100°C IF 4 A RMS forward current, f=50Hz IFRMS 5.6 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 12.5 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 18 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 40 i 2t value, TC=25°C, tp=10ms ³i2dt 0.78 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 36.5 W Operating and storage temperature Tj , Tstg -55... +175 °C

2008-06-02Rev. 2.5 Page 2 SDP04S60, SDD04S60 SDT04S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 4.1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: PG-TO252-3-1: @ min. footprint PG-TO252-3-1: @ 6 cm2 cooling area 2) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=4A, Tj=25°C IF=4A, Tj=150°C VF 1.7 1.9 2.4 V Reverse current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 200 1000 µA 1CCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30% 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2008-06-02Rev. 2.5 Page 3 SDP04S60, SDD04S60 SDT04S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Total capacitive charge VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C Qc - 13 - nC Switching time VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C trr - n.a. - ns Total capacitance VR=0V, TC=25°C, f=1MHz VR=300V, TC=25°C, f=1MHz VR=600V, TC=25°C, f=1MHz C 150 pF

2008-06-02Rev. 2.5 Page 4 SDP04S60, SDD04S60 SDT04S60

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 °C 180 TC W Ptot

2 Diode forward current

IF= f (TC) parameter: Tj≤175 °C 0 20 40 60 80 100 120 140 °C 180 TC 0.5 1.5 2.5 3.5 A 4.5 IF 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 0 1 2 3 4 5 A 7 IF(AV) W PF(AV) d=0.1 d=0.2 d=0.5 d=1 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 0 0.5 1 1.5 2 2.5 V 3.5 VF A IF -40°C 25°C 100°C 125°C 150°C

2008-06-02Rev. 2.5 Page 5 SDP04S60, SDD04S60 SDT04S60 5 Typ. reverse current vs. reverse voltage IR=f(VR) 100 200 300 400 V 600 VR -310 -210 -110 010 110 210 µA IR 25°C 100°C 125°C 150°C

6 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -410 -310 -210 -110 010 110 K/W SDP04S60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 7 Typ. capacitance vs. reverse voltage C= f(VR) parameter: TC = 25 °C, f = 1 MHz 10 0 10 1 10 2 10 3 V VR pF 125 C 8 Typ. C stored energy EC=f(VR) 0 100 200 300 400 V 600 VR 0.2 0.4 0.6 0.8 1.2 1.4 1.6 µJ EC

2008-06-02Rev. 2.5 Page 6 SDP04S60, SDD04S60 SDT04S60 9 Typ. capacitive charge vs. current slope Qc=f(diF/dt) parameter: Tj = 150 °C 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt nC Qc IF*0.5 IF IF*2

2008-06-02Rev. 2.5 Page 7 SDP04S60, SDD04S60 SDT04S60

2008-06-02Rev. 2.5 Page 7 SDP04S60, SDD04S60 SDT04S60 P-TO252-3-1, P-TO252-3-11, P-TO252-3-21 (D-Pak)

2008-06-02Rev. 2.5 Page 8 SDP04S60, SDD04S60 SDT04S60 PG-TO-220-2-2

2008-06-02Rev. 2.5 Page 9 SDP04S60, SDD04S60 SDT04S60