SDN520C SECOS | Alldatasheet

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Technical content

N-Ch: 4.5 A, 20 V , R DS(ON) 58 mΩΩ ΩΩ P-Ch: -4.5 A, -20 V , R DS(ON) 112 mΩΩ ΩΩ N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 4-Jul-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell Density trench process to provide low R DS(on) and to assures minimal power loss and heat dissipation.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe DFN2X2_6L saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ABSOLUTE MAXIMUM RATINGS( TA = 25 °C unless otherwise specified ) Parameter Symbol Ratings Unit N-Channel P-Channel Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 ±8 V Continuous Drain Current 1 TA=25 ℃℃ ℃℃ ID 4.5 -4.5 A TA=70 ℃℃ ℃℃ 4.5 -4.5 Pulsed Drain Current 2 IDM 8 -8 A Continuous Source Current (Diode Conduction) 1 I S 4.5 -4.5 A Power Dissipation 1 TA=25 ℃℃ ℃℃ PD 6.5 W TA=70 ℃℃ ℃℃ 5 Operating Junction and Storage Temperature Range TJ, Tstg -55 ~ +150 ℃℃ ℃℃ Thermal Resistance Rating Parameter Symbol Typ Max Unit Maximum Junction to Ambient 1 t ≦ 5 sec R θJA 52 65 ℃℃ ℃℃ / W Steady State 12.5 16 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. DFN2x2-6L REF. Millimeter REF. Millimeter A 2.00 BSC. G 0.23 0.30 0.38 B 2.00 BSC. H 0.65BSC - C 0.675 0.75 0.80 J 0 - 0.05 E F 0.65BSC P 0.60 0.65 0.70 TOP VIEW

N-Ch: 4.5 A, 20 V , R DS(ON) 58 mΩΩ ΩΩ P-Ch: -4.5 A, -20 V , R DS(ON) 112 mΩΩ ΩΩ N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 4-Jul-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise specified ) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage N-Ch VGS(th) 1 - - V VDS =V GS , I D =250uA P-Ch -1 - - V DS =V GS , I D = -250uA Gate-Body Leakage Current N-Ch IGSS - - 100 uA VDS = 0 , V GS = 8 V P-Ch - - -100 V DS = 0 , V GS = -8 V Zero Gate Voltage Drain Current N-Ch IDSS - - 1 uA VDS =16 V, V GS =0 P-Ch - - -1 V DS =-16V, V GS =0 N-Ch - - 10 VDS =16V, V GS =0 , T J=55 ℃ P-Ch - - -10 VDS = -16V, V GS =0 , T J=55 ℃ On-State Drain Current 1 N-Ch ID(on) 5 - - A VDS = 5V, V GS =4.5 V P-Ch -5 - - V DS = -5V, V GS = -4.5 V Drain-Source On-Resistance 1 N-Ch R DS(ON) - - 58 m Ω VGS =4.5V, I D = 1A P-Ch - - 112 V GS =-4.5V, I D = 1A N-Ch - - 82 V GS =2.5V, I D = A P-Ch - - 172 V GS =-2.5V, I D = -1A Forward Transconductance 1 N-Ch gfs - 10 - S VDS = 5V, I D = 1A P-Ch - 5 - V DS = -5V, I D = 11A Diode Forward Voltage 1 N-Ch VSD - 0.80 - S IS= 1.05A, V GS = 0 P-Ch - -0.83 - I S= -1.05A, V GS = 0 Dynamic 2 Total Gate Charge N-Ch Q g - 7.5 - nC N-Channel V DS =15V, V GS = 4.5V, ID = 2.7A P-Channel V DS = -15V, V GS = -4.5V, ID = -3.1A P-Ch - 3.8 - Gate-Source Charge N-Ch Q gs - 0.6 - P-Ch - 0.6 - Gate-Drain Charge N-Ch Q gd - 1.0 - P-Ch - 1.5 - Turn-on Delay Time N-Ch Td(on) - 5 - nS N-Channel V DD = 15V, R GEN = 15 Ω, VGS = 4.5V, I D = 1A P-Channel V DD = -15V, R GEN = 15 Ω VGS = -4.5V, I D = -1A P-Ch - 5 - Rise Time N-Ch Tr - 12 - P-Ch - 15 - Turn-off Delay Time N-Ch Td(off) - 13 - P-Ch - 20 - Fall Time N-Ch Tf - 7 - P-Ch - 20 - Notes: 1. Pulse test: PW <= 300us duty cycle <= 2%. 2. Guaranteed by design, not subject to production testing.