SDI75N12 SIRECTIFIER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
TC = 25oC, unless otherwise specified VCES V IC TC= 25(80)oC A ICRM A VGES TVj,(Tstg) Visol TC= 25(80)oC, tP =1ms AC, 1min IF = -IC IFRM IFSM TC= 25(80)oC TC= 25(80)oC, tP =1ms tP =10ms; sin.;Tj=150oC 1200 75(60) 150(120) +20 40...+150(125) 2500 150(120) 550 V oC V A A A TOPERATION <_ Tstg Freewheeling diode IF = -IC IFRM IFSM TC= 25(80)oC TC= 25(80)oC, tP =1ms tP =10ms; sin.;Tj=150oC 75(50) 95(65) 150(120) 720 A A A SDI75N12 Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Values
Symbol Conditions min. typ. max. Units IGBT VGE(th) VGE = VCE, IC =2mA 4.5 5.5 6.5 V ICES VGE = 0; VCE = VCES; Tj = 25(125)oC 0.1 0.3 mA rCE VGE = 15V, Tj = 25(125)oC 22(30) 28(38) m VCE(sat) IC =100A; VGE = 15V; chip level 2.5(3.1) 3(3.7) V Cies under following conditions 3.3 4.3 Coes VGE = 0, VCE = 25V, f = 1MHz 0.5 0.6 Cres 0.22 0.3 LCE 30 nH RCC'+EE' res., terminal-chip TC = 25(125)oC 0.75(1) m under following conditions: td(on) VCC = 600V, IC = 75A 44 100 ns tr RGon = RGoff = 22 , Tj = 125oC 56 100 ns td(off) VGE = ± 15V 380 500 ns tf 70 100 ns Eon(Eoff) 8(5) mJ Inverse Diode under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC 2(1.8) 2.5 V V(TO) Tj = 125oC 1.2 V rT Tj = 125oC 18 22 m IRRM IF = 50A; Tj = 25(125)oC 23(35) A Qrr di/dt = 800A/us uC Err VGE = V mJ FWD under following conditions: VF = VEC IF = 50A; VGE = 0V; Tj = 25(125)oC 1.85(1.6) 2.2 V V(TO) Tj = 125oC 1.2 V rT Tj = 125oC 12 15 m IRRM IF =50A; Tj = 25oC 27(40) A Qrr di/dt = A/us uC Err VGE = V mJ Thermal Characteristics Rth(j-c) per IGBT 0.27 K/W Rth(j-c)D per Inverse Diode 0.6 K/W Rth(j-c)FD per FWD 0.5 K/W Rth(c-s) per module 0.05 K/W Mechanical Data Ms to heatsink M6 3 5 Nm Mt to terminals M5 2.5 5 Nm w 160 g TC = 25oC, unless otherwise specified nF