SDI400N12 SIRECTIFIER | Alldatasheet
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Symbol Conditions Values Units IGBT VCES V IC TC= 25(80)oC A ICRM A VGES TVj,(Tstg) Visol Inverse Diode TC = 25oC, unless otherwise specified TC= 25(80)oC, tP =1ms TOPERATION <_ Tstg AC, 1min IF=-IC IFRM IFSM TC= 25(80)oC TC= 25(125)oC, tP =1ms tP =10ms; sin.;Tj=150oC 1200 400(330) 800(660) +20_ 40...+150(125) 4000 390(260) 800(660) 2900 V oC V A A A Dimensions in mm (1mm = 0.0394")
Symbol Conditions min. typ. max. Units IGBT VGE(th) VGE = VCE, IC = 12mA 4.8 5.5 6.45 V ICES VGE = 0; VCE = VCES; Tj = 25oC 0.1 0.3 mA rCE VGE = 15V, Tj = 25(125)oC 3.66(5) 4.66(6.33) m VCE(sat) IC =300A; VGE = 15V; chip level 2.5(3.1) 3(3.7) V Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz 3.3 4 Cres 1.2 1.6 LCE 20 nH RCC'+EE' res., terminal-chip TC = 25(125)oC 0.35(0.5) m under following conditions: td(on) VCC = 600V, IC = 300A 200 400 ns tr RGon = RGoff =3.3 , Tj = 125oC 115 220 ns td(off) VGE = ± 15V 720 900 ns tf 80 100 ns Eon(Eoff) 38(40) mJ Inverse Diode under following conditions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC 2(1.8) 2.5 V V(TO) Tj = 125oC 1.2 V rT Tj = 125oC 2.5 3.5 m IRRM IF = 300A; Tj = 25(125)oC 85(140) A Qrr di/dt = 2000A/us uC Err VGE = V mJ Thermal Characteristics Rth(j-c) per IGBT 0.05 K/W Rth(j-c)D per Inverse Diode 0.125 K/W Rth(c-s) per module 0.038 K/W Mechanical Data Ms to heatsink M6 3 5 Nm Mt to terminals M6 Nm w 325 g TC = 25oC, unless otherwise specified nF 13(40) 22 30