SDI300N12 SIRECTIFIER | Alldatasheet
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Technical content
TC = 25oC, unless otherwise specified VCES V IC TC= 25(80)oC A ICRM A VGES TVj,(Tstg) Visol TC= 25(80)oC, tP =1ms AC, 1min IF = -IC IFRM IFSM TC= 25(80)oC TC= 25(80)oC, tP =1ms tP =10ms; sin.;Tj=150oC 1200 300(220) 600(440) +20 40...+150(125) 2500 600(440) 2200 V oC V A A A TOPERATION <_ Tstg Freewheeling diode IF = -IC IFRM IFSM TC= 25(80)oC TC= 25(80)oC, tP =1ms tP =10ms; sin.;Tj=150oC 260(180) 350(230) 600(440) 2900 A A A SDI300N12 Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Values
Symbol Conditions min. typ. max. Units IGBT VGE(th) VGE = VCE, IC =6mA 4.5 5.5 6.5 V ICES VGE = 0; VCE = VCES; Tj = 25(125)oC 0.1 0.3 mA rCE VGE = 15V, Tj = 25(125)oC 5.5(7.5) 7(9.5) m VCE(sat) IC =150A; VGE = 15V; chip level 2.5(3.1) 3(3.7) V Cies under following conditions 18 24 Coes VGE = 0, VCE = 25V, f = 1MHz 2.5 3.2 Cres 1 1.3 LCE 20 nH RCC'+EE' res., terminal-chip TC = 25(125)oC 0.35(0.5) m under following conditions: td(on) VCC = 600V, IC = 150A 250 400 ns tr RGon = RGoff =4.7 , Tj = 125oC 90 160 ns td(off) VGE = ± 15V 550 700 ns tf 70 100 ns Eon(Eoff) 28(26) mJ Inverse Diode under following conditions: VF = VEC IF = 200A; VGE = 0V; Tj = 25(125)oC 2(1.8) 2.5 V V(TO) Tj = 125oC 1.2 V rT Tj = 125oC 3 5.5 m IRRM IF = 200A; Tj = 25(125)oC 70(105) A Qrr di/dt = A/us uC Err VGE = V mJ FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC 1.9(1.7) 2.4 V V(TO) Tj = 125oC 1.2 V rT Tj = 125oC 3 3.5 m IRRM IF = 200A; Tj = 25(125)oC 80(140) A Qrr di/dt = A/us uC Err VGE = V mJ Thermal Characteristics Rth(j-c) per IGBT 0.075 K/W Rth(j-c)D per Inverse Diode 0.18 K/W Rth(j-c)FD per FWD 0.15 K/W Rth(c-s) per module 0.038 K/W Mechanical Data Ms to heatsink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm w 325 g TC = 25oC, unless otherwise specified nF 10(26) 10(34) 1.1