SDI150N12 SIRECTIFIER | Alldatasheet
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Technical content
TC = 25oC, unless otherwise specified VCES V IC TC= 25(80)oC A ICRM A VGES TVj,(Tstg) Visol TC= 25(80)oC, tP =1ms AC, 1min IF = -IC IFRM IFSM TC= 25(80)oC TC= 25(80)oC, tP =1ms tP =10ms; sin.;Tj=150oC 1200 150(110) 300(220) +20 40...+150(125) 2500 300(220) 1100 V oC V A A A TOPERATION <_ Tstg Freewheeling diode IF = -IC IFRM IFSM TC= 25(80)oC TC= 25(80)oC, tP =1ms tP =10ms; sin.;Tj=150oC 150(100) 200(135) 300(220) 1450 A A A SDI150N12 Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Values
Symbol Conditions min. typ. max. Units IGBT VGE(th) VGE = VCE, IC =4mA 4.5 5.5 6.5 V ICES VGE = 0; VCE = VCES; Tj = 25(125)oC 0.1 0.3 mA rCE VGE = 15V, Tj = 25(125)oC 11(15) 14(19) m VCE(sat) IC =100A; VGE = 15V; chip level 2.5(3.1) 3(3.7) V Cies under following conditions 6.5 8.5 Coes VGE = 0, VCE = 25V, f = 1MHz 1 1.5 Cres 0.5 0.6 LCE 20 nH RCC'+EE' res., terminal-chip TC = 25(125)oC 0.35(0.5) m under following conditions: td(on) VCC = 600V, IC = 100A 160 320 ns tr RGon = RGoff =6.8 , Tj = 125oC 80 160 ns td(off) VGE = ± 15V 400 520 ns tf 70 100 ns Eon(Eoff) 13(11) mJ Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC 2(1.8) 2.5 V V(TO) Tj = 125oC 1.2 V rT Tj = 125oC 8 11 m IRRM IF = 100A; Tj = 25(125)oC 35(50) A Qrr di/dt = A/us uC Err VGE = V mJ FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC 1.85(1.6) 2.2 V V(TO) Tj = 125oC 1.2 V rT Tj = 125oC 5 7 m IRRM IF = 100A; Tj = 25oC 40(65) A Qrr di/dt = A/us uC Err VGE = V mJ Thermal Characteristics Rth(j-c) per IGBT 0.15 K/W Rth(j-c)D per Inverse Diode 0.3 K/W Rth(j-c)FD per FWD 0.25 K/W Rth(c-s) per module 0.038 K/W Mechanical Data Ms to heatsink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm w 325 g TC = 25oC, unless otherwise specified nF 5(14) 5(15)