SDI145S12 SIRECTIFIER | Alldatasheet
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Technical content
TC = 25oC, unless otherwise specified VCES V IC TC= 25(80)oC A ICRM A VGES TVj,(Tstg) Visol TC= 25(80)oC, tP =1ms AC, 1min IF = -IC IFRM IFSM TC= 25(80)oC TC= 25(80)oC, tP =1ms tP =10ms; sin.;Tj=150oC 1200 190(135) 380(270) +20 40...+150(125) 4000 380(270) 1100 V oC V A A A TOPERATION <_ Tstg Freewheeling diode IF = -IC IFRM IFSM TC= 25(80)oC TC= 25(80)oC, tP =1ms tP =10ms; sin.;Tj=150oC 130(90) 130(90) 350(260) 1100 A A A SDI145S12 Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Values
Symbol Conditions min. typ. max. Units IGBT VGE(th) VGE = VCE, IC =2mA 4.5 5.5 6.5 V ICES VGE = 0; VCE = VCES; Tj = 25(125)oC 0.1 0.3 mA rCE VGE = 15V, Tj = 25(125)oC 9(12) 12(15) m VCE(sat) IC =100A; VGE = 15V; chip level 1.9(2.1) 2.35(2.55) V Cies under following conditions 9 Coes VGE = 0, VCE = 25V, f = 1MHz 1 Cres 1 LCE 25 nH RCC'+EE' res., terminal-chip TC = 25(125)oC 0.75(1) m under following conditions: td(on) VCC = 600V, IC = 100A 190 ns tr RGon = RGoff = 9 , Tj = 125oC 50 ns td(off) VGE = ± 15V 590 ns tf 50 ns Eon(Eoff) 11.5(9.5) mJ Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC 2(1.8) 2.5 V V(TO) Tj = 25(125)oC 1.4 V rT Tj = 25(125)oC 9 13 m IRRM IF = 100A; Tj = 125oC 130 A Qrr di/dt = 3500A/us uC Err VGE = V mJ FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC 2.1(1.8) 2.5 V V(TO) Tj = 25(125)oC 1.4 V rT Tj = 25(125)oC 9 13 m IRRM IF = 100A; Tj = 25(125)oC 130 A Qrr di/dt = A/us uC Err VGE = V mJ Thermal Characteristics Rth(j-c) per IGBT 0.165 K/W Rth(j-c)D per Inverse Diode 0.36 K/W Rth(c-s) per module 0.05 K/W Mechanical Data Ms to heatsink M6 3 5 Nm Mt to terminals M5 2.5 5 Nm w 160 g TC = 25oC, unless otherwise specified nF 1.1 4.8 1.1 4.8