SDH03 SANKEN | Alldatasheet
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IC -VCE Characteristics (Typical) I C -VBE Temperature Characteristics (Typical) hFE -IC Characteristics (Typical) hFE -IC Temperature Characteristics (Typical) Characteristic curves SDH03 (Ta=25°C) Symbol Unit VCBO 100 –60 V VCEO 100 –60 V VEBO 6– 6 V IC 1.5 –1.5 A ICP 2.5 (PW≤1ms, Du≤100%) –2.5 (PW ≤1ms, Du≤10%) A IB 0.1 –0.1 A PT 3 (Ta=25°C) W Tj 150 °C Tstg –40 to +150 °C θ j–a 41.6 °C/W Specification NPN PNP 2.5 2.0 1.5 1.0 0.5 123 45 6 VCE (V) IC (A) IB=10mA 2mA4mA 1.2mA 0.6mA 0.4mA 0.3mA 15 16 11 12 14 9 10 R 3 R 1 R 2 R 4 10000 5000 1000 500 100 hFE (VCE =4V) IC (A) typ 2.5 2.0 1.5 1.0 0.5 012 3 IC (A) VBE (V) (VCE =4V) T a=125 –30 –0.5 –2.5 –2.0 –1.5 –1.0 VCE (V) IC (A) IB=–5mA –1.2mA –1.0mA –0.8mA –0.6mA –0.5mA –0.4mA –0.3mA –2mA 10000 (VCE =–4V) 5000 1000 500 100 IC (A) hFE Typ –2.5 –2.0 –1.5 –1.0 –0.5 0– 1– 2 – 3 VBE (V) IC (A) (VCE =–4V) Ta=125°C 75°C 25°C –30°C PNP + NPN Darlington H-bridge R 3: 4kΩ typ R 4: 100Ω typ R 1: 4kΩ typ R 2: 200Ω typ (VCE =4V)10000 5000 1000 500 100 hFE IC (A) Ta=125 75°C 25°C –30 10000 (VCE =–4V) 5000 1000 500 100 IC (A) hFE –0.05 Ta=125 75°C 25°C –30 External dimensionsE • • • SD Absolute maximum ratings n Equivalent circuit diagram
VCE (sat)-IB Characteristics (Typical) VCE (sat)-IC Temperature Characteristics (Typical) Safe Operating Area (SOA) Characteristic curves SDH03 (Ta=25°C) NPN PNP Symbol Specification Unit Conditions Specification Unit Conditions min typ max min typ max ICBO 10 µAV CB =100V –10 µAV CB =–60V IEBO 3m A V EB =6V –3 mA V EB =–6V VCEO 100 V I C =10mA –60 V I C =–10mA hFE 2000 12000 V CE =4V, IC =1A 2000 12000 V CE =–4V, IC =–1A VCE (sat) 1.3 V IC =1A, IB=2mA –1.4 V IC =–1A, IB=–2mA VBE (sat) 2.2 V –2.2 V 0.1 0.5 1 5 10 50 100 IC =2A IC =1A IC =0.5A VCE (sat) (V) IB (mA ) 51 10 100 500 1000 50 θ j–a (°C / W) PW (mS) 0.5 0.1 0.05 0.03 3 5 10 50 100 VCE (V) IC (A) Single Pulse Without Heatsink Ta=25°C 100 µs 1ms 10ms 50 100 150 PT (W) Ta (°C) 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation VCE (sat) (V) IB (mA) IC =–2A IC =–1A IC =–0.5A –0.5 –0.1 –0.05 VCE (V) IC (A) 1ms 10 ms 100 µs Single Pulse Without Heatsink T a=25°C 1 5 10 50 100 500 1000 θ j–a (°C / W) PW (mS) 0.2 0.5 1 2.5 (IC / IB=1000) VCE (sat) (V) IC (A) Ta=125°C 75°C 25°C –30°C IC (A) (IC / IB=1000) VCE (sat) (V) –0.2 –0.5 –1 –2.5 Ta=–30°C 25°C75°C 125°C
Electrical characteristics
θ j-a-PW Characteristics NPN PNP