SDH02_01 SANKEN | Alldatasheet
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IC -VCE Characteristics (Typical) h FE -IC Characteristics (Typical) h FE -IC Temperature Characteristics (Typical) VCE (sat)-IC Temperature Characteristics (Typical) V CE (sat)-IB Characteristics (Typical) I C -VBE Temperature Characteristics (Typical) θ j-a-PW Characteristics P T-Ta Characteristics Safe Operating Area (SOA) SDH02 (Ta=25°C) Symbol Ratings Unit VCBO 120 V VCEO 100 V VEBO 6V IC 1.5 A ICP 2.5 (PW≤1ms, Du≤10%) A IB 0.2 A IF 1.5 A IFSM 2.5 (PW≤0.5ms, Du≤10%) A VR 120 V PT 3 (Ta=25°C) W Tj 150 °C Tstg –40 to +150 °C (Ta=25°C) Symbol Unit Conditions ICBO 10 µAV CB =120V IEBO 3m A V EB =6V VCEO 100 V I C =10mA hFE 2000 6000 12000 V CE =4V, IC =1A VCE (sat) 1.1 1.3 V VBE (sat) 1.7 2.2 V ton 0.5 µsV CC 30V, tstg 4.5 µsI C =1A, tf 1.2 µsI B1=–IB2=2mA fT 50 MHz V CE =12V, IE=–0.1A C ob 20 pF V CB =10V, f=1MHz IC =1A, IB=2mA (Ta=25°C) Symbol Unit Conditions VR 120 V I R =10µA VF 1.6 V I F=1A IR 10 µAV R =120V trr 100 ns I F=±100mA Specification min typ max Specification min typ max 2.5 2.0 1.5 1.0 0.5 123 45 6 VCE (V) IC (A) IB=10mA 2mA4mA 1.2m A 0.6mA 0.4mA 0.3m A 10000 5000 1000 500 100 hFE (VCE =4V) IC (A) typ (VCE =4V)10000 5000 1000 500 100 hFE IC (A) Ta=125 75°C 25°C –30°C 0.2 0.5 1 2.5 (IC / IB=1000) VCE (sat) (V) IC (A) Ta=125°C 75°C 25°C –30°C 0.1 0.5 1 5 10 50 100 IC =2A IC =1A IC =0.5A VCE (sat) (V) IB (mA) 2.5 2.0 1.5 1.0 0.5 012 3 IC (A) VBE (V) (VCE =4V) T a=125 –30 51 10 100 500 1000 50 θ j–a (°C / W) PW (mS) 50 100 150 PT (W) Ta (°C) 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 0.5 0.1 0.05 0.03 3 5 10 50 100 VCE (V) IC (A) Single Pulse Without Heatsink T a=25°C 100 µs s10ms 16 15 R 1 R 2 14 13 12 11 10 9 NPN Darlington With built-in flywheel diode R 1: 2.5kΩ typ R2: 200Ω typ External dimensionsE • • • SD Absolute maximum ratings G Diode for flyback voltage absorptionI Equivalent circuit diagram