SDG5521C SECOS | Alldatasheet

Document overview

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Technical content

N-Ch: 5A, 20V , RDS(ON) 58 mΩΩ ΩΩ P-Ch: -4.7A, -20V , RDS(ON) 77 mΩΩ ΩΩ N & P-Ch Enhancement Mode Power MOSFET 03-May-2013 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low thermal impedance copper leadframe DFN2*3 saves board space. /circle6 Fast switching speed. /circle6 High performance trench technology.

PACKAGE INFORMATION

DFN2*3 3K 13’ inch ABSOLUTE MAXIMUM RATINGS (T A=25 °C unless otherwise specified) Rating Parameter Symbol N-CH P-CH Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 ±8 V TA = 25° C 5 -4.7 A Continuous Drain Current 1 TA = 70° C ID 4.1 -3.9 A Pulsed Drain Current 2 IDM 8 -8 A Continuous Source Current (Diode Conduction) 1 I S 4.5 -4.5 A TA = 25° C 2.1 W Total Power Dissipation 1 TA = 70° C PD 1.3 W Operating Junction & Storage Temperature Range T J, T STG -55 ~ 150 ° C Thermal Resistance Ratings t≦10 sec 62.5 ° C / W Maximum Junction-to-Ambient 1 Steady State R θJA 80 ° C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. DFN2*3 A 3.00 BSC. F 0.24 0.35 B 1.70 BSC. G 2.00 BSC. C 0.70 0.90 H 0.20 0.40 D 0.65 BSC. I 0 0.15 E 0.08 0.25 Top View

N-Ch: 5A, 20V , RDS(ON) 58 mΩΩ ΩΩ P-Ch: -4.7A, -20V , RDS(ON) 77 mΩΩ ΩΩ N & P-Ch Enhancement Mode Power MOSFET 03-May-2013 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25 °C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static N 1 - - V DS =V GS , I D =250 µA Gate Threshold Voltage V GS(th) P -1 - - V VDS =V GS , I D = -250 µA N - - 100 V DS =0, VGS =8V Gate-Body Leakage I GSS P - - -100 µA VDS =0, VGS = -8V N - - 1 V DS =16V, V GS =0 P - - -1 V DS = -16V, V GS =0 N - - 10 V DS =16V, V GS =0, T J =55° C Zero Gate Voltage Drain Current IDSS P - - -10 µA VDS = -16V, V GS =0, T J =55° C N 5 - - V DS =5V, V GS =4.5V On-State Drain Current 1 I D(on) P -5 - - A VDS = -5V, V GS = -4.5V - - 58 V GS =4.5V, I D =1A N - - 64 V GS =2.5V, I D =1A Drain-Source On-Resistance 1 R DS(ON) P - - 85 m Ω VGS = -2.5V, I D = -1A N - 10 V DS =5V, I D =1A Forward Tranconductance 1 g fS P - 5 S VDS = -5V, I D = -1A N - 0.8 - V GS =0, I S=1A Diode Forward Voltage 1 V SD P - -0.83 - V VGS =0, I S= -1A Dynamic 2 N - 2 - Total Gate Charge Q g P - 7 - N - 0.4 - Gate-Source Charge Q gs P - 1 - N - 0.7 - Gate-Drain Charge Q gd P - 2 - nC N-Channel I D =1A, VDS =15V, VGS =4.5V P-Channel I D = -1A, VDS = -15V, VGS = -4.5V N - 6 - Turn-On Delay Time T d(on) P - 10 - N - 9 - Rise Time T r P - 1 - N - 5 - Turn-Off Delay Time T d(off) P - 11 - N - 16 - Fall Time T f P - 12 - nS N-Channel V DD =15V, V GEN =4.5V ID =1A, R GEN =15 Ω P-Channel V DD = -15V, V GEN = -4.5V ID =1A, R GEN =15 Ω Notes: 1. Pulse test ：PW ≦300 µs duty cycle ≦2%. 2. Guaranteed by design, not subject to production testing.