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11A, 20V , RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 20-Apr-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe DFN2x5 saves board space  Fast switching speed  High performance trench technology

PACKAGE INFORMATION

DFN2x5 5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current 1 TA = 25°C ID 11 A TA = 70°C 8.5 A Pulsed Drain Current 2 I DM ±40 A Continuous Source Current (Diode Conduction) 1 I S 3.1 A Total Power Dissipation 1 TA = 25°C PD 3.5 W TA = 70°C 1.8 W Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦10 sec RθJA 36 °C / W Steady State 76 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 0.70 0.80 I 2.00 BSC B 0.00 0.06 J 1.30 1.55 C 0.10 0.20 K 2.60 2.86 D0 ° 12° L 1.67 BSC E 5.00 BSC M 0.15 BSC F 4.50 BSC N 0.40 0.60 G 0.50 BSC O 0.00 0.10 H 0.20 0.30 DFN2x5 B C A I J K L M N O E D F G H 2KV

11A, 20V , RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 20-Apr-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Condition Static Gate Threshold Voltage V GS(th) 0.5 - - V V DS=VGS, ID=250μA Gate-Body Leakage Current I GSS - - ±10 μA V DS=0, VGS= ±12V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS=16V, VGS=0 - - 30 V DS=16V, VGS=0, TJ=55°C On-State Drain Current 1 I D(on) 20 - - A V DS=5V, VGS=4.5V Drain-Source On-Resistance 1 R DS(ON) 10 18 22 mΩ VGS=4.5V, ID=6.7A 10.5 19 23 V GS=4V, ID=5.6A 11 23 28 V GS=2.5V, ID=4.5A Forward Transconductance 1 g fs - 22 - S V DS=15V, ID=6A Diode Forward Voltage V SD - 0.7 - V I S=0.5A, VGS=0 Dynamic 2 Total Gate Charge Q g - 9.2 - nC I D=6A, VDS=10V, VGS=4.5V Gate-Source Charge Q gs - 1.9 - Gate-Drain Charge Q gd - 2.8 - Turn-On Delay Time T d(on) - 1.7 - nS VDD=10V, VGEN=4.5V ID=1A, RL=15Ω Rise Time T r - 2.3 - Turn-Off Delay Time T d(off) - 1.1 - Fall Time T f - 4.4 - Notes 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.

11A, 20V , RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 20-Apr-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES

11A, 20V , RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 20-Apr-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES