SDD60N14

SDD60 SIRECTIFIER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

V 800 1200 1400 1600 1800 VRSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine 100 60 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 1150 1300 1000 1200 AIFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 6600 7000 5000 5950 A2s TVJ TVJM Tstg -40...+150 150 -40...+125 oC VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M5) 2.5-4/22-35 2.5-4/22-35 Nm/lb.in. Weight 90 g i2dt Typical including screws

• Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

• Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit VVF IF=200A; TVJ=25oC 1.60 VTO For power-loss calculations only 0.8 V rT 4.3 m IR TVJ=TVJM; VR=VRRM 10 mA TVJ=TVJM per diode; DC current per moduleRthJC 0.59

0.295 K/W

per diode; DC current per moduleRthJK 0.79

0.395 K/W

dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uCQS TVJ=125oC; IF=50A; -di/dt=0.64A/us 90 IRM 11 A

FEATURES

• International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate

Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 2x SDD60

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d RthJK (K/W) DC 0.79 180oC 0.81 120oC 0.83 60oC 0.86 30oC 0.90 Constants for ZthJK calculation: iR thi (K/W) ti (s) 1 0.012 0.0012 2 0.045 0.095 3 0.533 0.455 4 0.2 0.495 RthJC for various conduction angles d: d RthJC (K/W) DC 0.59 180oC 0.61 120oC 0.63 60oC 0.66 30oC 0.70 Constants for ZthJC calculation: iR thi (K/W) ti (s) 1 0.012 0.0012 2 0.045 0.095 3 0.533 0.455 3 x SDD60