SDD451 SSOUSA | Alldatasheet
Document overview
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Technical content
The SDD451 consists of a photo Darlington transistor optically coupled to a light emitting diode. Optical coupling between the input LED and output phototransistor allows for high isolation levels while maintaining low-level DC signal control capability. The SDD451 provides an optically isolated method of controlling many interface applications such as telecommunications, industrial control and instrumentation circuitry.
DESCRIPTION
High current transfer ratio (CTR: MIN.600% at If=1mA, Vce=2V)• High input-to-output isolation package (3750 Vrms)•
4 Pin small outline package•
System appliances, measuring instruments• Industrial robots• Copiers, automated vending machines• Signal transmission between varying circuits• Telephone sets• Fax machines• Interface with various power supply circuits• Numerical control machines• Tape and Reel• -TR PARAMETER UNIT MIN TYP MAX Storage Temperature °C -40 125 Operating Temperature °C -40 100 Continuous Input Current mA 50 Transient Input Current A 1 Reverse Input Control Voltage V 6 Output Power Dissipation mW 170 UL and C-UL approved File#E201932• rev 1.0 Solid State Optronics, Inc. 1.888.377.4776 www.ssousa.com 1. Anode 2. Cathode 3. Emitter 4. Collector
ELECTRICAL CHARACTERISTICS - 25° PARAMETER UNIT MIN TYP MAX TEST CONDITIONS INPUT SPECIFICATIONS LED Forward Voltage V 1.2 1.4 If = 20mA LED Reverse Current µ 10 VR=4VA OUTPUT SPECIFICATIONS Collector-Emitter Breakdown Voltage V 35 Emitter-Collector Voltage V 5 Dark Current µ 1 Vce = 10V, If=0A Floating Capacitance p 0.6 1 V= 0V, f=1.0MHzF Saturation Voltage V 1 If = 20mA, Ic = 1mA Current Transfer Ratio % 600 7500 If = 1mA, Vce = 2V Rise Time µ 60 Ic = 2mA, Vce = 2V, Rc = 100 ohmss Fall Time µ 50 Ic = 2mA, Vce = 2V, Rc = 100 ohmss COUPLED SPECIFICATIONS Isolation Voltage V 5000 T = 1 minute Isolation Resistance G 50Ω Cut off Frequency k 7 Ic = 2mA, Vcc = 5V, Rc = 100 ohmsHz rev 1.0 Solid State Optronics, Inc. 1.888.377.4776 www.ssousa.com
rev 1.0 Solid State Optronics, Inc. 1.888.377.4776 www.ssousa.com Fig.2 Collector Power Dissipation vs. Ambient Temperature Ambient Temperature Ta (°C) Diode power dissipation Pc (mW) Fig.1 Forward Current vs. Ambient Temperature Ambient Temperature Ta (°C) Forward Current IF (mA) Fig.3 Peak Forward Current vs. Duty Ratio Duty ratio Peak forward Current IFM (mA) Fig.5 Current Transfer Ratio vs. Forward Current Forward Current IF (mA) Current transfer ratio CTR (%) Fig.6 Collector Current vs. Collector- emitter Voltage Collector Current Ic (mA) Collector current IC (mA) Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature Ambient Temperature Ta (°C) Collector-emitter saturation Voltage VCE (SAT) (V) Fig.9 Collector Dark Current vs. Ambient Temperature Ambient Temperature Ta (°C) Collector dark current ICEO (A) Fig.11 Collector-emitter Saturation Voltage vs. Forward current Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE (sat) (V) Fig.4 Forward Current vs. Forward Voltage Forward voltage VF (V) Forward Current IF (mA) Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Ambient Temperature Ta (°C) Relative current transfer ratio (%) Fig.10 Response Time vs. Load Resistance Load resistance RL (K ohm) Response Time (us)
4 PIN SMALL OUTLINE PACKAGE
rev 1.0 Solid State Optronics, Inc. 1.888.377.4776 www.ssousa.com END VIEW TOP VIEW BACK VIEW .275” ± 0.015” (6.985 ± 0.4mm) .80” ± 0.005” (1.96 ± 0.13mm) .170” ± 0.010” (4.165 ± 0.3mm) SDD451 DC Input Optocoupler