SDD36 SIRECTIFIER | Alldatasheet

Document overview

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Technical content

V 800 1200 1400 1600 1800 VRSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine 36 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 650 760 580 630 AIFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 2100 2400 1700 1900 A2s TVJ TVJM Tstg -40...+150 150 -40...+125 oC VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M5) 2.5-4/22-35 2.5-4/22-35 Nm/lb.in. Weight 90 g i2dt Typical including screws

  • Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

  • Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit VVF IF=80A; TVJ=25oC 1.38 VTO For power-loss calculations only 0.8 V rT 6.1 m IR TVJ=TVJM; VR=VRRM 10 mA TVJ=TVJM per diode; DC current per moduleRthJC 1.0

0.5 K/W

per diode; DC current per moduleRthJK 1.2

0.6 K/W

dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uCQS TVJ=125oC; IF=25A; -di/dt=0.6A/us 50 IRM 6 A

FEATURES

  • International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~

Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD36

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d RthJK (K/W) DC 1.20 180oC 1.22 120oC 1.24 60oC 1.27 30oC 1.30 Constants for ZthJK calculation: iR thi (K/W) ti (s) 1 0.01 0.0012 2 0.03 0.095 3 0.96 0.455 4 0.2 0.495 RthJC for various conduction angles d: d RthJC (K/W) DC 1.00 180oC 1.02 120oC 1.04 60oC 1.07 30oC 1.10 Constants for ZthJC calculation: iR thi (K/W) ti (s) 1 0.01 0.0012 2 0.03 0.095 3 0.96 0.455 3 x SDD36