SDD320 SIRECTIFIER | Alldatasheet

Document overview

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Technical content

V 800 1200 1400 1600 1800 VRSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine 480 320 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 11500 12200 9600 10200 AIFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 662000 620000 460000 430000 A2s TVJ TVJM Tstg -40...+150 150 -40...+125 oC VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M8) 2.5-5/22-24 12-15/106-132 Nm/lb.in. Weight 320 g i2dt Typical including screws

  • Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

  • Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit VVF IF=600A; TVJ=25oC 1.2 VTO For power-loss calculations only 0.75 V rT 0.63 m IRRM TVJ=TVJM; VR=VRRM 40 mA TVJ=TVJM per diode; DC current per moduleRthJC 0.129

0.065 K/W

per diode; DC current per moduleRthJK 0.169

0.0845 K/W

dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uCQS TVJ=125oC; IF=400A; -di/dt=50A/us 760 IRM 275 A

FEATURES

  • International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~

Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 2 x SDD320

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d RthJK (K/W) DC 0.169 180oC 0.171 120oC 0.172 60oC 0.172 30oC 0.173 Constants for ZthJK calculation: iR thi (K/W) ti (s) 1 0.0035 0.0099 2 0.0165 0.168 3 0.1091 0.456 4 0.04 1.36 RthJC for various conduction angles d: d RthJC (K/W) DC 0.129 180oC 0.131 120oC 0.132 60oC 0.132 30oC 0.133 Constants for ZthJC calculation: iR thi (K/W) ti (s) 1 0.0035 0.0099 2 0.0165 0.168 3 0.1091 0.456 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 t s ZthJK K/W t s ZthJC K/W 30° DC 30° DC 3 x SDD320