SDD190 SIRECTIFIER | Alldatasheet

Document overview

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Technical content

V 800 1200 1400 1600 1800 VRSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine 300 190 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 6600 7290 5600 6200 AIFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 218000 221000 157000 160000 A2s TVJ TVJM Tstg -40...+150 150 -40...+125 oC VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M6) Terminal connection torque (M6) 2.25-2.75/20-25 4.5-5.5/40-48 Nm/lb.in. Weight 120 g i2dt Typical including screws

  • Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

  • Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit VVF IF=300A; TVJ=25oC 1.15 VTO For power-loss calculations only 0.8 V rT 0.8 m IR TVJ=TVJM; VR=VRRM 20 mA TVJ=TVJM per diode; DC current per moduleRthJC 0.21

0.105 K/W

per diode; DC current per moduleRthJK 0.31

0.155 K/W

dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uCQS TVJ=125oC; IF=300A; -di/dt=50A/us 550 IRM 235 A

FEATURES

  • International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~

Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 2 x SDD190

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d RthJK (K/W) DC 0.31 180oC 0.323 120oC 0.333 60oC 0.360 30oC 0.395 Constants for ZthJK calculation: iR thi (K/W) ti (s) 1 0.0087 0.001 2 0.0163 0.065 3 0.185 0.4 4 0.1 1.29 RthJC for various conduction angles d: d RthJC (K/W) DC 0.210 180oC 0.223 120oC 0.233 60oC 0.260 30oC 0.295 Constants for ZthJC calculation: iR thi (K/W) ti (s) 1 0.0087 0.001 2 0.0163 0.065 3 0.185 0.4 3 x SDD190