SDD120N16B

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Technical content

V RRM V 800 1200 1400 1600 1800 V RSM V 900 1300 1500 1700 1900 SDD120N20B 20002100 SDD120N22B 22002300 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine 188 120 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 2800 3300 2500 2750 AI FSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 39200 45000 31200 31300 A TVJ TVJM Tstg -40...+150 150 -40...+125 oC VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M5) 2.5-4/22-35 2.5-4/22-35 Nm/lb.in. Weight 105 g i2dt Typ. 7olerance:+0.5mm- SDD10NXXB 6 ' . $ $ . . 6 ' $ ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

• Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

• Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit VVF IF=360A; TVJ=25oC 1.63 VTO For power-loss calculations only 0.75 V rT1.95 m IR TVJ=TVJM; VR=VRRM 15 mA TVJ=TVJM per diode; DC current per moduleR thJC 0.30

0.145 K/W

per diode; DC current per moduleR thJK 0.50

0.245 K/W

dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uCQS TVJ=125oC; IF=50A; -di/dt=3A/us 170 IRM 45 A

FEATURES

• International standard package * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs compliant * Copper base plate SDD10NXXB ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

Fig. 11L Power dissipation per diode vs. forward current I PFAV FAV20 A 1/2 SDD120B.W rec. rec. 120 rec. 180 sin. 180 PFAV Fig. 11R Power dissipation per diode vs. ambient temperature Ta 50 100 150 C O C O K/W Rth(c-a)1 Fig. 12L Power dissipation of two modules vs. direct current Pvtot A 2 SDD120B.W 100 200 300 ID 100 R L Pvtot Fig. 12R Power dissipation of two modules vs. case temperature Ta Tc 50 100 150 C O K/W Rth(c-a) 100 200 W 300 123 113 103 C O Fig. 13L Power dissipation of three modules vs. direct current Pvtot A 3 SDD B 120.W 200 300 ID 100 Pvtot Fig. 13R Power dissipation of three modules vs. case temperature Ta Tc 50 100 150 C O K/W Rth(c-a) 200 W 300 122 112 102 100 150 40 60 80 cont. W 100 150 2.5 1.4 1.2 1.0 0.9 400 400 400 500 600 200 400 500 600 100 120 1.7 500 200 500 0.15 700 300 700 0.7 0.6 0.5 0.4 0.3 0.175 600 300 600 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.35 0.25 0.2 0.175 0.15 0.1 0.25 0.2 0.1 0.125 0.15 0.075 Sirectifier SDD120NXXB ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

Fig. 14 Transient thermal impedance vs. time 1/2 SDD120B.K/W Zth(j-s) Zth(j-c) Zth 0.4 0.6 0.2 0.3 0.5 0.001 t 0.01 0.1 1 10 s 100 0.1 Fig. 15 Forward characteristics IF VF A 0.5 1 1.5 v 2 1/2 SDD120B. typ. max. Tvj=25 C Tvj=125 C O 100 200 300 400 Fig. 16 Surge overload current vs. time IFSM(25 C) =2500A O IFSM(125 C)=2000A O 1 V RRM. 0.5 V RRM. 0 V RRM. 1 t 10 100 ms 1000 0.4 0.6 0.8 1.2 1.4 1.6 IF(OV) IFSM 1/2 SDD120B. Diode-Diode Modules SDD10NXXB ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com