SDD120 SIRECTIFIER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

V 800 1200 1400 1600 1800 VRSM V 900 1300 1500 1700 1900 Dimensions in mm (1mm=0.0394") Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM TVJ=TVJM TC=105oC; 180o sine 180 120 A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 2800 3300 2500 2750 AIFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 39200 45000 31200 31300 A2s TVJ TVJM Tstg -40...+150 150 -40...+125 oC VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) Terminal connection torque (M5) 2.5-4/22-35 2.5-4/22-35 Nm/lb.in. Weight 90 g i2dt Typical including screws

  • Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits

APPLICATIONS

  • Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit VVF IF=300A; TVJ=25oC 1.43 VTO For power-loss calculations only 0.75 V rT 1.95 m IR TVJ=TVJM; VR=VRRM 15 mA TVJ=TVJM per diode; DC current per moduleRthJC 0.26

0.13 K/W

per diode; DC current per moduleRthJK 0.46

0.23 K/W

dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uCQS TVJ=125oC; IF=50A; -di/dt=6A/us 170 IRM 45 A

FEATURES

  • International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate

Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD120

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d RthJK (K/W) DC 0.46 180oC 0.48 120oC 0.50 60oC 0.54 30oC 0.58 Constants for ZthJK calculation: iR thi (K/W) ti (s) 1 0.013 0.0012 2 0.072 0.047 3 0.175 0.394 4 0.2 1.32 RthJC for various conduction angles d: d RthJC (K/W) DC 0.26 180oC 0.28 120oC 0.30 60oC 0.34 30oC 0.38 Constants for ZthJC calculation: iR thi (K/W) ti (s) 1 0.013 0.0012 2 0.072 0.047 3 0.175 0.394 3 x SDD120