SDD10N01 THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 /hexstar2 High current capability /hexstar2 Case: Heatsink TO-220CE package /hexstar2 High surge current capability /hexstar2 Weight: 2.0 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant TO-220AB Unit:mm Application /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS,UPS and Motor Control /hexstar2 Car Audio Amplifiers and Sound Device Systems etc..
10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes
Latest&matured mesa technology with high reliablity Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Prefix "SDA" Prefix "SDS" Prefix "SDD"Prefix "SDK" SDD10N01 thru SDD10N07 9.19 ±0.20 φ3.60 ±0.20 9.90 ±0.20 2.80 ±0.20 15.70 ±0.20 13.08 ±0.20 3.02 ±0.20 2.54typ 6.50 ±0.20 0.80 ±0.20 1.27 ±0.20 1.52 ±0.20 1.30 ±0.20 4.50 ±0.20 0.50 ±0.20 2.40 ±0.20 2.54typ © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/2Rev.05 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS For capacitive load, derate current by 20%. Single phase, half wave, 60Hz, resistive or inductive load. Rating at 25 o C ambient temperature unless otherwise specified.
A =25°C unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES 0 50 100 150 AVERAGE FORWARD CURRENT(A) CASE TEMPERATURE( FIG.1 MAXMUM FORWARD CURRENT DERATING CURVE Resistive of inductive load 100 125 150 175 1 10 100 PEAK FORWARD SURGE CURRENT(A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms single half sine wave 0.1 100 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS PER LEG T J =125°C T J =25°C 0.1 100 1000 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 4 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Pulse width=300μs 1% duty cycle 100 120 0.1 1 10 100 1000 JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vslg=50mVp-p SDD10N01 thru SDD10N07 © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/2Rev.05