SDC06_01 SANKEN | Alldatasheet
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Technical content
IC -VCE Characteristics (Typical) h FE -IC Characteristics (Typical) h FE -IC Temperature Characteristics (Typical) VCE (sat)-IC Temperature Characteristics (Typical) V CE (sat)-IB Characteristics (Typical) I C -VBE Temperature Characteristics (Typical) θ j-a-PW Characteristics P T-Ta Characteristics Safe Operating Area (SOA) SDC06 (Ta=25°C) Symbol Ratings Unit VCBO 30 to 45 V VCEO 30 to 45 V VEBO 6V IC 2A ICP 3 (PW≤1ms, Du≤10%) A IB 30 mA PT 3 (Ta=25°C) W Tj 150 °C Tstg –40 to +150 °C θ j–a 41.6 °C/W (Ta=25°C) Symbol Unit Conditions ICBO 10 µAV CB =30V IEBO 1.2 2.8 mA V EB =6V VCEO 30 45 V I C =10mA hFE 400 700 2000 V CE =4V, IC =0.5A VCE (sat) 0.2 V I C =0.5A, IB=5mA
0.6 V I C =1A, IB=5mA
VFEC 2.0 V I FEC =1A ton 1.2 µsV CC 10V, tstg 18.0 µsI C =0.5A, tf 3.6 µsI B1=5mA, IB2=0A fT 20 MHz V CE =12V, IE=–0.2A C ob 50 pF V CB =10V, f=1MHz ES/B 40 mJ L=10mH, Single pulse Specification min typ max R B: 800Ω typ RBE : 2kΩ typ 0123456 IC (A) VCE (V) IB=30mA 1mA 2mA 3mA 5mA 8mA12mA 1000 500 100 0.03 0.05 0.1 0.5 1 3 typ (VCE =4V) IC (A) hFE 1000 500 100 0.03 0.05 0.1 0.5 1 3 IC (A) (VCE =4V) hFE Ta=125°C 75°C 25°C –30°C 0.2 0.5 1 3 (IC / IB=100) VCE (sat) (V) IC (A) Ta=125 –30°C 1 5 10 30 IB (mA) VCE (sat) (V) IC =1A IC =0.5A 50 100 150 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation PT (W) Ta (°C) 0.5 0.1 51 0 5 0 IC (A) Single Pulse Without Heatsink Ta=25°C VCE (V) 1mS 1 5 10 50 100 500 1000 θ j–a (°C / W) PW (mS) 15,16
1 R B
13,14
3 R B
11,12
5 R B
9,10
7 R B
With built-in avalanche diode Absolute maximum ratings Electrical characteristics External dimensionsE • • • SD I Equivalent circuit diagram